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参数资料
| 型号： | DS1258W |
| 厂商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分类： | DRAM |
| 英文描述： | 3.3V 128K x 16 Nonvolatile SRAM(3.3V 128K x 16 非易失性静态RAM) |
| 中文描述： | 128K X 16 NON-VOLATILE SRAM MODULE, 150 ns, PDIP40 |
| 封装： | 0.740 INCH, PLASTIC, DIP-40 |
| 文件页数： | 8/9页 |
| 文件大小： | 71K |
| 代理商： | DS1258W |
DS1258W
022598 8/9
3. t
WP
is specified as the logical AND of CEU or CEL and WE. t
WP
is measured from the latter of CEU, CEL or WE
going low to the earlier of CEU, CEL or WE going high.
4. t
DS
is measured from the earlier of CEU or CEL or WE going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6. If the CEU or CEL low transition occurs simultaneously with or later than the WE low transition in the output buffers
remain in a high impedance state during this period.
7. If the CEU or CEL high transition occurs prior to or simultaneously with the WE high transition, the output buffers
remain in high impedance state during this period.
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CEU or CEL low transition, the
output buffers remain in a high impedance state during this period.
9. Each DS1258W has a built–in switch that disconnects the lithium source until V
CC
is first applied by the user. The
expected t
DR
is defined as accumulative time in the absence of V
CC
starting from the time power is first applied
by the user.
10.All AC and DC electrical characteristics are valid over the full operating temperature range 0
°
C to 70
°
C.
11. In a power down condition the voltage on any pin may not exceed the voltage on V
CC
.
12.t
WR1
, t
DH1
are measured from WE going high.
13.t
WR2
, t
DH2
are measured from CEU OR CEL going high.
DC TEST CONDITIONS
Outputs Open
Cycle = 200 ns
All voltages are referenced to ground
AC TEST CONDITIONS
Output Load: 100 pF + 1TTL Gate
Input Pulse Levels:
0.0 to 3.0 volts
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5 ns
ORDERING INFORMATION
DS1258 W P – SSS – III
Operating Temperature Range
blank: 0
°
to 70
°
IND: –40
°
to +85
°
C
Access
150:
Speed
150 ns
Package Type
blank:
40–pin 600 mil DIP
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1258W-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258W-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258W-100IND | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258W-100-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
| DS1258W-100IND# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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