参数资料
型号: DS1345YG-70-IND
厂商: Maxim Integrated Products, Inc.
英文描述: 1024k Nonvolatile SRAM with Battery Monitor
中文描述: 1024k非易失SRAM与电池监视器
文件页数: 1/12页
文件大小: 229K
代理商: DS1345YG-70-IND
1 of 12
032904
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Power supply monitor resets processor when
V
CC
power loss occurs and holds processor in
reset during V
CC
ramp-up
Battery monitor checks remaining capacity
daily
Read and write access times as fast as 70ns
Unlimited write cycle endurance
Typical standby current 50
μ
A
Upgrade for 128k x 8 SRAM, EEPROM or
Flash
Lithium battery is electrically disconnected to
retain freshness until power is applied for the
first time
Full
±
10% V
CC
operating range (DS1345Y)
or optional
±
5% V
CC
operating range
(DS1345AB)
Optional industrial temperature range of
-40
°
C to +85
°
C, designated IND
PowerCap Module (PCM) package
-
Directly surface-mountable module
-
Replaceable snap-on PowerCap provides
lithium backup battery
-
Standardized pinout for all nonvolatile
(NV) SRAM products
-
Detachment feature on PowerCap allows
easy removal using a regular screwdriver
DESCRIPTION
The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words
by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which
constantly monitors V
CC
for an out-of-tolerance condition. When such a condition occurs, the lithium
energy source is automatically switched on and write protection is unconditionally enabled to prevent
data corruption. Additionally, the DS1345 devices have dedicated circuitry for monitoring the status of
V
CC
and the status of the internal lithium battery. DS1345 devices in the PowerCap module package are
directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete NV
SRAM module. The devices can be used in place of 128k x 8 SRAM, EEPROM, or Flash components.
PIN ASSIGNMENT
PIN DESCRIPTION
A0 – A16
DQ0 – DQ7
CE
WE
OE
RST
BW
V
CC
GND
NC
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Reset Output
- Battery Warning Output
- Power (+5V)
- Ground
- No Connect
DS1345Y/AB
1024k Nonvolatile SRAM
with Battery Monitor
www.maxim-ic.com
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
BW
A15
A16
RST
V
WE
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
NC
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
33
NC
GND
V
BAT
34-Pin PowerCap Module (PCM)
(Uses DS9034PC PowerCap)
相关PDF资料
PDF描述
DS1350AB 4096K Nonvolatile SRAM with Battery Monitor(带电池监控的 4096K非易失性SRAM)
DS1350Y 4096K Nonvolatile SRAM with Battery Monitor(带电池监控的4096K非易失性SRAM)
DS1350W 3.3V 4096K Nonvolatile SRAM with Battery Monitor(带电池监控的3.3V 4096K非易失性SRAM)
DS1371 2-Wire, 32-Bit Binary Counter Watchdog Clock
DS1371U 2-Wire, 32-Bit Binary Counter Watchdog Clock
相关代理商/技术参数
参数描述
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DS1345YL-100-IND 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:1024K Nonvolatile SRAM with Battery Monitor
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DS1345YL-70IND 功能描述:IC NVSRAM 1MBIT 70NS 34LPM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN(2x3) 包装:管件 产品目录页面:1445 (CN2011-ZH PDF)
DS1345YL-70-IND 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:1024K Nonvolatile SRAM with Battery Monitor