参数资料
型号: DS1345YG-70-IND
厂商: Maxim Integrated Products, Inc.
英文描述: 1024k Nonvolatile SRAM with Battery Monitor
中文描述: 1024k非易失SRAM与电池监视器
文件页数: 4/12页
文件大小: 229K
代理商: DS1345YG-70-IND
DS1345Y/AB
4 of 12
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(t
A
: See Note 10)
PARAMETER
SYMBOL
DS1345AB Power Supply Voltage
V
CC
DS1345Y Power Supply Voltage
V
CC
Logic 1
V
IH
Logic 0
V
IL
DC ELECTRICAL
(V
CC
= 5V
±
=
5% for DS1345AB)
CHARACTERISTICS
(t
A
: See Note 10) (V
CC
= 5V
±
=
10% for DS1345Y)
PARAMETER
SYMBOL
Input Leakage Current
I
IL
I/O Leakage Current
CE
V
IH
V
CC
I
IO
Output Current @ 2.4V
I
OH
Output Current @ 0.4V
I
OL
Standby Current
CE
= 2.2V
I
CCS1
Standby Current
CE
= V
CC
-0.5V
I
CCS2
Operating Current
I
CCO1
Write Protection Voltage (DS1345AB)
V
TP
Write Protection Voltage (DS1345Y)
V
TP
CAPACITANCE
(t
A
= 25
°
C)
PARAMETER
SYMBOL
Input Capacitance
C
IN
Input/Output Capacitance
C
I/O
-0.3V to +6.0V
0°C to 70°C, -40°C to +85°C for IND parts
-40°C to +70°C, -40°C to +85°C for IND parts
260°C for 10 seconds
MIN
4.75
4.5
2.2
0.0
TYP
5.0
5.0
MAX
5.25
5.5
V
CC
0.8
UNITS NOTES
V
V
V
V
MIN
-1.0
-1.0
-1.0
2.0
4.50
4.25
TYP
200
50
4.62
4.37
MAX
+1.0
+1.0
600
150
85
4.75
4.5
UNITS NOTES
μ
A
μ
A
mA
mA
μ
A
μ
A
mA
V
V
14
14
MIN
TYP
5
5
MAX
10
10
UNITS NOTES
pF
pF
相关PDF资料
PDF描述
DS1350AB 4096K Nonvolatile SRAM with Battery Monitor(带电池监控的 4096K非易失性SRAM)
DS1350Y 4096K Nonvolatile SRAM with Battery Monitor(带电池监控的4096K非易失性SRAM)
DS1350W 3.3V 4096K Nonvolatile SRAM with Battery Monitor(带电池监控的3.3V 4096K非易失性SRAM)
DS1371 2-Wire, 32-Bit Binary Counter Watchdog Clock
DS1371U 2-Wire, 32-Bit Binary Counter Watchdog Clock
相关代理商/技术参数
参数描述
DS1345YL-100 功能描述:IC NVSRAM 1MBIT 100NS 34LPM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN(2x3) 包装:管件 产品目录页面:1445 (CN2011-ZH PDF)
DS1345YL-100-IND 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:1024K Nonvolatile SRAM with Battery Monitor
DS1345YL-70 功能描述:IC NVSRAM 1MBIT 70NS 34LPM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN(2x3) 包装:管件 产品目录页面:1445 (CN2011-ZH PDF)
DS1345YL-70IND 功能描述:IC NVSRAM 1MBIT 70NS 34LPM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN(2x3) 包装:管件 产品目录页面:1445 (CN2011-ZH PDF)
DS1345YL-70-IND 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:1024K Nonvolatile SRAM with Battery Monitor