- 您现在的位置：买卖IC网 > PDF目录381719 > DS1345YG-70-IND (Maxim Integrated Products, Inc.) 1024k Nonvolatile SRAM with Battery Monitor PDF资料下载
参数资料
| 型号： | DS1345YG-70-IND |
| 厂商： | Maxim Integrated Products, Inc. |
| 英文描述： | 1024k Nonvolatile SRAM with Battery Monitor |
| 中文描述： | 1024k非易失SRAM与电池监视器 |
| 文件页数： | 8/12页 |
| 文件大小： | 229K |
| 代理商： | DS1345YG-70-IND |
DS1345Y/AB
8 of 12
POWER-DOWN/POWER-UP TIMING
(t
A
: See Note 10)
PARAMETER
SYMBOL
V
CC
Fail Detect to
CE
and
WE
Inactive
t
PD
V
CC
slew from V
TP
to 0V
t
F
V
CC
Fail Detect to
RST
Active
t
RPD
V
CC
slew from 0V to V
TP
t
R
V
CC
Valid to
CE
and
WE
Inactive
t
PU
V
CC
Valid to End of Write Protection
t
REC
V
CC
Valid to
RST
Inactive
t
RPU
V
CC
Valid to
BW
Valid
t
BPU
BATTERY WARNING TIMING
(t
A
: See Note 10)
PARAMETER
SYMBOL
Battery Test Cycle
t
BTC
Battery Test Pulse Width
t
BTPW
Battery Test to
BW
Active
t
BW
(t
A
= 25
°
C)
PARAMETER
SYMBOL
Expected Data Retention Time
t
DR
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1.
WE
is high for a Read Cycle.
2.
OE
= V
IH
or V
IL
. If
OE
= V
IH
during write cycle, the output buffers remain in a high-impedance state.
3. t
WP
is specified as the logical AND of
CE
and
WE
. t
WP
is measured from the latter of
CE
or
WE
going low to the earlier of
CE
or
WE
going high.
4. t
DS
is measured from the earlier of
CE
or
WE
going high.
5. These parameters are sampled with a 5pF load and are not 100% tested.
6. If the
CE
low transition occurs simultaneously with or latter than the
WE
low transition, the output
buffers remain in a high-impedance state during this period.
7. If the
CE
high transition occurs prior to or simultaneously with the
WE
high transition, the output
buffers remain in high-impedance state during this period.
8. If
WE
is low or the
WE
low transition occurs prior to or simultaneously with the
CE
low transition,
the output buffers remain in a high impedance state during this period.
MIN
150
150
150
TYP
200
MAX
1.5
15
2
125
350
1
UNITS NOTES
μ
s
μ
s
μ
s
μ
s
ms
ms
ms
s
11
14
14
14
MIN
TYP
24
MAX
1
1
UNITS NOTES
hr
s
s
MIN
10
TYP
MAX
UNITS NOTES
years
9
相关PDF资料 |
PDF描述 |
|---|---|
| DS1350AB | 4096K Nonvolatile SRAM with Battery Monitor(带电池监控的 4096K非易失性SRAM) |
| DS1350Y | 4096K Nonvolatile SRAM with Battery Monitor(带电池监控的4096K非易失性SRAM) |
| DS1350W | 3.3V 4096K Nonvolatile SRAM with Battery Monitor(带电池监控的3.3V 4096K非易失性SRAM) |
| DS1371 | 2-Wire, 32-Bit Binary Counter Watchdog Clock |
| DS1371U | 2-Wire, 32-Bit Binary Counter Watchdog Clock |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1345YL-100 | 功能描述:IC NVSRAM 1MBIT 100NS 34LPM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| DS1345YL-100-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:1024K Nonvolatile SRAM with Battery Monitor |
| DS1345YL-70 | 功能描述:IC NVSRAM 1MBIT 70NS 34LPM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| DS1345YL-70IND | 功能描述:IC NVSRAM 1MBIT 70NS 34LPM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| DS1345YL-70-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:1024K Nonvolatile SRAM with Battery Monitor |
发布紧急采购，3分钟左右您将得到回复。