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| 型号： | DS1345YG-70-IND |
| 厂商： | Maxim Integrated Products, Inc. |
| 英文描述： | 1024k Nonvolatile SRAM with Battery Monitor |
| 中文描述： | 1024k非易失SRAM与电池监视器 |
| 文件页数： | 9/12页 |
| 文件大小： | 229K |
| 代理商： | DS1345YG-70-IND |
DS1345Y/AB
9 of 12
9. Each DS1345 has a built-in switch that disconnects the lithium source until the user first applies V
CC
.
The expected t
DR
is defined as accumulative time in the absence of V
CC
starting from the time power
is first applied by the user. This parameter is assured by component selection, process control, and
design. It is not measured directly during production testing.
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0
°
C to 70
°
C. For industrial products (IND), this range is -40
°
C to
+85
°
C.
11. In a power-down condition the voltage on any pin may not exceed the voltage on V
CC
.
12. t
WR1
and t
DH1
are measured from
WE
going high.
13. t
WR2
and t
DH2
are measured from
CE
going high.
14.
RST
and
BW
are open-drain outputs and cannot source current. External pullup resistors should be
connected to these pins for proper operation. Both pins will sink 10mA.
15. DS1345 modules are recognized by Underwriters Laboratory (U.L.
) under file E99151.
DC TEST CONDITIONS
AC TEST CONDITIONS
Outputs Open
Output Load: 100 pF + 1TTL Gate
Cycle = 200ns for operating current
Input Pulse Levels: 0 – 3.0V
All voltages are referenced to ground
Timing Measurement Reference Levels
Input pulse Rise and Fall Times: 5ns
ORDERING INFORMATION
DS1345 TTP - SSS - III
Access Speed
70:
100:
Package Type
P:
34-pin PowerCap Module
V
CC
Tolerance
AB:
±
5%
Y:
±
10%
Input: 1.5V
Output: 1.5V
Operating Temperature Range
blank: 0
°
to 70
°
IND: -40
°
to +85
°
C
70ns
100ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1345YL-100 | 功能描述:IC NVSRAM 1MBIT 100NS 34LPM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| DS1345YL-100-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:1024K Nonvolatile SRAM with Battery Monitor |
| DS1345YL-70 | 功能描述:IC NVSRAM 1MBIT 70NS 34LPM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| DS1345YL-70IND | 功能描述:IC NVSRAM 1MBIT 70NS 34LPM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| DS1345YL-70-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:1024K Nonvolatile SRAM with Battery Monitor |
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