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| 型号： | DS80C410-FNY+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 26/102页 |
| 文件大小： | 0K |
| 描述： | IC MCU 75MHZ 16MB HP 100-LQFP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 90 |
| 系列： | 80C |
| 核心处理器： | 8051 |
| 芯体尺寸： | 8-位 |
| 速度： | 75MHz |
| 连通性： | 1 线，CAN，EBI/EMI，以太网，SIO，UART/USART |
| 外围设备： | 电源故障复位，WDT |
| 输入/输出数： | 64 |
| 程序存储器容量： | 64KB（64K x 8） |
| 程序存储器类型： | ROM |
| RAM 容量： | 64K x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 1.62 V ~ 3.6 V |
| 振荡器型： | 外部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 100-LQFP |
| 包装： | 托盘 |
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DS80C410/DS80C411 Network Microcontrollers with Ethernet and CAN
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Note 1:
Specifications to -40°C are guaranteed by design and not production tested.
Note 2:
The user should note that this part is tested and guaranteed to operate down to VCC3 = 3.0V and VCC1 = 1.62V, while the reset
thresholds for those supplies, VRST3 and VRST1 respectively, may be above or below those points. When the reset threshold for a
given supply is greater than the guaranteed minimum operating voltage, that reset threshold should be considered the minimum
operating point since execution ceases once the part enters the reset state. When the reset threshold for a given supply is lower
than the guaranteed minimum operating voltage, there exists a range of voltages for either supply, (VRST3 < VCC3 < 1.62V) or (VRST1
< VCC1 < 3.0V), where the processor’s operation is not guaranteed, and the reset trip point has not been reached. This should not
be an issue in most applications, but should be considered when proper operation must be maintained at all times. For these
applications, it may be desirable to use a more accurate external reset.
Note 3:
While the specifications for VPFW3 and VRST3 overlap, the design of the hardware makes it such that this is not possible. Within the
ranges given, there is a guaranteed separation between these two voltages.
Note 4:
Current measured with 75MHz clock source on XTAL1, VCC3 = 3.6V, VCC1 = 2.0V, EA and RST = 0V, Port0 = VCC3, all other pins
disconnected.
Note 5:
While the specifications for VPFW1 and VRST1 overlap, the design of the hardware makes it such that this is not possible. Within the
ranges given, there will be a guaranteed separation between these two voltages.
Note 6:
Certain pins exhibit stronger drive capability when being used to address external memory. These pins and associated memory
interface function (in parentheses) are as follows: Port 3.6-3.7 (WR, RD), Port 4 (CE0-3, A16-A19), Port 5.4-5.7 (PCE0-3), Port 6.0-
6.5 (CE4-7, A20, A21), Port 7 (demultiplexed mode A0-A7).
Note 7:
This measurement reflects the weak I/O pullup state that persists following the momentary strong 0 to 1 port pin drive (VOH2). This
I/O pin state can be achieved by applying RST = VCC3.
Note 8:
The measurement reflects the momentary strong port pin drive during a 0-to-1 transition in I/O mode. During this period, a one shot
circuit drives the ports hard for two clock cycles. A weak pullup device (VOH1) remains in effect following the strong two-clock cycle
drive. If a port 4 or 6 pin is functioning in memory mode with pin state of 0 and the SFR bit contains a 1, changing the pin to an I/O
mode (by writing to P4CNT, for example) does not enable the two-cycle strong pullup.
Note 9:
Port 3 pins 3.6 (WR) and 3.7(RD) have a stronger than normal pullup drive for only one system clock period following the transition
of either WR or RD from a 0 to a 1.
Note 10:
This is the current required from an external circuit to hold a logic low level on an I/O pin while the corresponding port latch bit is set
to 1. This is only the current required to hold the low level; transitions from 1 to 0 on an I/O pin also have to overcome the transition
current.
Note 11:
Following the 0 to 1 one-shot timeout, ports in I/O mode source transition current when being pulled down externally. It reaches a
maximum at approximately 2V.
Note 12:
During external addressing mode, weak latches are used to maintain the previously driven state on the pin until such time that the
Port 0 pin is driven by an external memory source.
Note 13:
The OW pin (when configured to output a 1) at VIN = 5.5V, EA, MUX, and all MII inputs (TXCLk, RXCLk, RX_DV, RX_ER, RXD[3:0],
CRS, COL, MDIO) at VIN = 3.6V.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS80C410-FNY+ | 功能描述:8位微控制器 -MCU Network MCU w/Ethernet & CAN RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| DS80C411 | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:Network Microcontrollers with Ethernet and CAN |
| DS80C411-FNY | 功能描述:8位微控制器 -MCU Network MCU w/Ethernet & CAN RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| DS80C411-FNY+ | 功能描述:8位微控制器 -MCU Network MCU w/Ethernet & CAN RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| DS80CH11 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:System Energy Manager |
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