参数资料
型号: EM6M1T2R
厂商: Rohm Semiconductor
文件页数: 7/7页
文件大小: 0K
描述: MOSFET N/P-CH 30V .1A EMT6
产品培训模块: MOSFETs
产品目录绘图: EM6 Series EMT-6
特色产品: ECOMOS? Series MOSFETs
标准包装: 1
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V,20V
电流 - 连续漏极(Id) @ 25° C: 100mA,200mA
开态Rds(最大)@ Id, Vgs @ 25° C: 8 欧姆 @ 10mA,4V
闸电荷(Qg) @ Vgs: 0.9nC @ 4.5V
输入电容 (Ciss) @ Vds: 13pF @ 5V
功率 - 最大: 150mW
安装类型: 表面贴装
封装/外壳: SOT-563,SOT-666
供应商设备封装: EMT6
包装: 标准包装
产品目录页面: 1639 (CN2011-ZH PDF)
其它名称: EM6M1T2RDKR
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
ROHM Customer Support System
www.rohm.com
THE AMERICAS / EUROPE / ASIA / JAPAN
Contact us : webmaster@ rohm.co. jp
Copyright ? 2008 ROHM CO.,LTD.
21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan
TEL : +81-75-311-2121
FAX : +81-75-315-0172
Appendix1-Rev2.0
相关PDF资料
PDF描述
EM6M2T2R MOSFET N/P-CH 20V 200MA EMT6
EMH1303-TL-E MOSFET P-CH 12V 7A EMH8
EMH1307-TL-H MOSFET P-CH 20V 6.5A EMH8
EMH1405-TL-H MOSFET N-CH 30V 8.5A EMH8
EMH2308-TL-E MOSFET P-CH DUAL 30V 3A ECH8
相关代理商/技术参数
参数描述
EM6M2 制造商:ROHM 制造商全称:Rohm 功能描述:1.2V Drive Nch+Pch MOSFET
EM6M2T2R 功能描述:MOSFET 1.2V Drive Nch+Pch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
EM700 制造商:EDI 制造商全称:Electronic devices inc. 功能描述:HIGH VOLTAGE HIGH CURRENT MINIATURE RECTIFIERS
EM710FR16BW-12L 制造商:EMLSI 制造商全称:Emerging Memory & Logic Solutions Inc 功能描述:64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
EM710FR16BW-12S 制造商:EMLSI 制造商全称:Emerging Memory & Logic Solutions Inc 功能描述:64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM