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| 型号： | FDB8447L |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 6/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 15A D2PAK |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 15A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.5 毫欧 @ 14A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 52nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2620pF @ 20V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDB8447LDKR |
tm
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ImpliedDisconnect ?
IntelliMAX?
ISOPLANAR?
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MicroPak?
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POP?
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QFET ?
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
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As used herein:
1. Life support devices or systems are devices or systems which, (a) are
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Datasheet Identification
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Definition
This datasheet contains the design specifications for product develop-
ment. Specifications may change in any manner without notice.
This datasheet contains preliminary data, and supplementary data will be pub-
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice in order to improve
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This datasheet contains specifications on a product that has been discontin-
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mation only.
?2007 Fairchild Semiconductor Corporation
6
Rev. I23
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
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| FDB8453LZ | 功能描述:MOSFET 40V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| FDB86135 | 功能描述:MOSFET PWM PFC COMBO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB8832 | 功能描述:MOSFET 30V N-CH Logic Level PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB8832_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrench?? MOSFET 30V, 80A, 2.1m?? |
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