- 您现在的位置：买卖IC网 > Datasheet目录415 > FDC6320C (Fairchild Semiconductor)MOSFET N/P-CH DUAL 25V SSOT6 Datasheet资料下载
参数资料
| 型号： | FDC6320C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH DUAL 25V SSOT6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 220mA，120mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 欧姆 @ 400mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 9.5pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 其它名称： | FDC6320CDKR |
DMOS Electrical Characteristics (T A = 25 O C unless otherwise noted )
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS (Note 2)
t D(on)
Turn - On Delay Time
N-Channel
N-Ch
5
11
nS
V DD = 6 V, I D = 0.5 A,
P-Ch
6
12
t r
Turn - On Rise Time
V GS = 4.5 V, R GEN = 50 ?
N-Ch
4.5
10
nS
P-Ch
6
12
t D(off)
Turn - Off Delay Time
P-Channel
N-Ch
4
10
nS
V DD = -6 V, I D = -0.5 A,
P-Ch
7.4
15
t f
Turn - Off Fall Time
V GEN = -4.5 V, R GEN = 50 ?
N-Ch
3.2
8
nS
P-Ch
4
10
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-Channel
V DS = 5 V,
I D = 0.2 A, V GS = 4.5 V
P-Channel
V DS = -5 V,
I D = -0.2A, V GS = -4.5 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
0.29
0.23
0.105
0.12
0.045
0.4
0.32
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
P-Ch
0.03
I S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
0.5
A
P-Ch
-0.5
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 0.5 A
(Note 2)
N-Ch
0.97
1.3
V
V GS = 0 V, I S = -0.5 A
(Note 2)
P-Ch
-1
-1.3
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed by
design while R θ CA is determined by the user's board design.
Typical R θ JA using the board layouts shown below on FR-4 PCB in a still air environment:
a. 140 O C/W on a 0.125 in 2 pad of
2oz copper.
b. 180 O C/W on a 0.005 in 2 of pad
of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDC6320C.Rev C
相关PDF资料 |
PDF描述 |
|---|---|
| FDC6321C | MOSFET N/P-CH DUAL 25V SSOT-6 |
| FDC6327C | MOSFET N/P-CH DUAL 20V SSOT-6 |
| FDC6333C | MOSFET N-CH/P-CHAN 30V SSOT6 |
| FDC634P | MOSFET P-CH 20V 3.5A SSOT-6 |
| FDC637AN | MOSFET N-CH 20V 6.2A SSOT-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC6320C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC6320C_Q | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6321C | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6321C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6 |
| FDC6321C_Q | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。