参数资料
型号: FDC6327C
厂商: Fairchild Semiconductor
文件页数: 3/9页
文件大小: 0K
描述: MOSFET N/P-CH DUAL 20V SSOT-6
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Mold Compound Change 08/April/2008
产品目录绘图: MOSFET SuperSOT-6
标准包装: 1
系列: PowerTrench®
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2.7A,1.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 80 毫欧 @ 2.7A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 4.5nC @ 4.5V
输入电容 (Ciss) @ Vds: 325pF @ 10V
功率 - 最大: 700mW
安装类型: 表面贴装
封装/外壳: SOT-23-6 细型,TSOT-23-6
供应商设备封装: 6-SSOT
包装: 标准包装
产品目录页面: 1603 (CN2011-ZH PDF)
其它名称: FDC6327CDKR
Electrical Characteristics
(continued)
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min
Typ
Max Units
Switching Characteristics
(Note 2)
t d(on)
Turn-On Delay Time
N-Channel
N-Ch
5
15
ns
V DD = 10 V, I D = 1 A,
P-Ch
7
14
t r
Turn-On Rise Time
V GS = 4.5V, R GEN = 6 ?
N-Ch
9
18
ns
P-Ch
14
25
t d(off)
t f
Turn-Off Delay Time
Turn-Off Fall Time
P-Channel
V DD = -10 V, I D = -1 A,
V GS = -4.5 V, R GEN = 6 ?
N-Ch
P-Ch
N-Ch
12
14
3
22
25
9
ns
ns
P-Ch
3
9
Q g
Total Gate Charge
N-Channel
N-Ch
3.25
4.5
nC
V DS = 10 V, I D = 2.7 A, V GS = 4.5V
P-Ch
2.85
4.0
Q gs
Gate-Source Charge
P-Channel
N-Ch
P-Ch
0.65
0.68
nC
Q gd
Gate-Drain Charge
V DS = -10 V, I D = -1.9 A,V GS = -4.5V
N-Ch
0.90
nC
Drain-Source Diode Characteristics and Maximum Ratings
P-Ch
0.65
I S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
0.8
A
P-Ch
-0.8
V SD
Drain-Source Diode Forward V GS = 0 V, I S = 0.8 A (Note 2)
Voltage
V GS = 0 V, I S = - 0.8 A (Note 2)
N-Ch
P-Ch
0.76
-0.79
1.2
-1.2
V
Notes:
1: R θ JA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R θ JC is guaranteed by design while R θ JA is determined by the user's board design. Both devices are assumed to be operating and sharing the dissipated heat energy
equally.
a) 130 ° C/W when
mounted on a 0.125 in 2
pad of 2 oz. copper.
b) 140 ° C/W when
mounted on a 0.005 in 2
pad of 2 oz. copper.
c) 180 ° C/W when
mounted on a 0.0015 in 2
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDC6327C, Rev. E
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