参数资料
型号: FDD14AN06LA0_F085
厂商: Fairchild Semiconductor
文件页数: 4/11页
文件大小: 0K
描述: MOSFET N-CH 60V 9.5A DPAK-3
标准包装: 2,500
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 9.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 11.6 毫欧 @ 50A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 32nC @ 5V
输入电容 (Ciss) @ Vds: 2810pF @ 25V
功率 - 最大: 125W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252
包装: 带卷 (TR)
Typical Characteristics T C = 25°C unless otherwise noted
1000
500
100
10 μ s
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
100 μ s
10
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
DC
1ms
10ms
10
STARTING T J = 25 o C
0.1
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
1
STARTING T J = 150 o C
1
10
100
0.001
0.01
0.1
1
10
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
100
75
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
100
75
V GS = 10V
V GS = 5V
V GS = 4V
50
T J = 25 o C
50
T C = 25 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
25
T J = 175 o C
25
0
T J =
-55 o C
0
V GS = 3V
2.0
2.5
3.0
3.5
4.0
4.5
0
0.5 1.0 1.5
2.0
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
13
PULSE DURATION = 80 μ s
2.5
PULSE DURATION = 80 μ s
12
11
10
DUTY CYCLE = 0.5% MAX
V GS = 5V
2.0
1.5
1.0
DUTY CYCLE = 0.5% MAX
V GS = 10V
V GS = 5V, I D = 50A
9
0.5
0
10
20
30
40
50
-80
-40
0
40
80
120
160
200
I D , DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
?2010 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD14AN06LA0_F085 Rev. C
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