参数资料
型号: FDD14AN06LA0_F085
厂商: Fairchild Semiconductor
文件页数: 5/11页
文件大小: 0K
描述: MOSFET N-CH 60V 9.5A DPAK-3
标准包装: 2,500
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 9.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 11.6 毫欧 @ 50A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 32nC @ 5V
输入电容 (Ciss) @ Vds: 2810pF @ 25V
功率 - 最大: 125W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252
包装: 带卷 (TR)
Typical Characteristics T C = 25°C unless otherwise noted
1.4
V GS = V DS , I D = 250 μ A
1.2
I D = 250 μ A
1.2
1.1
1.0
0.8
1.0
0.6
0.4
0.9
-80
-40
0 40 80 120 160
200
-80
-40
0 40 80 120 160
200
T J , JUNCTION TEMPERATURE ( o C)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
5000
C ISS = C GS + C GD
T J , JUNCTION TEMPERATURE ( o C)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
V DD = 30V
8
1000
C OSS ? C DS + C GD
6
C RSS = C GD
4
WAVEFORMS IN
100
50
V GS = 0V, f = 1MHz
2
0
DESCENDING ORDER:
I D = 50A
I D = 10A
0.1
1 10
60
0
10
20 30
40
50
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
?2010 Fairchild Semiconductor Corporation
Q g , GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
FDD14AN06LA0_F085 Rev. C
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