参数资料
型号: FDD14AN06LA0_F085
厂商: Fairchild Semiconductor
文件页数: 9/11页
文件大小: 0K
描述: MOSFET N-CH 60V 9.5A DPAK-3
标准包装: 2,500
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 9.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 11.6 毫欧 @ 50A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 32nC @ 5V
输入电容 (Ciss) @ Vds: 2810pF @ 25V
功率 - 最大: 125W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252
包装: 带卷 (TR)
SABER Electrical Model
REV January 2004
template FDD14AN06LA0 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=15e-12,rs=3.2e-3,nl=1.05,trs1=1.5e-3,trs2=1e-6,cjo=10e-10,tt=1.5e-8,m=0.58,ikf=15.00,xti=3)
dp..model dbreakmod = (rs=1e-1,trs1=1.12e-3,trs2=1.25e-6)
dp..model dplcapmod = (cjo=80e-11,isl=10e-30,nl=10,m=0.57)
m..model mmedmod = (type=_n,vto=2,kp=8,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=2.45,kp=105,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=1.61,kp=0.04,is=1e-30, tox=1,rs=0.1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-3)
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-3,voff=-4)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-2.5,voff=-0.5)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=-0.5,voff=-2.5)
10
DPLCAP
5
RSLC1
LDRAIN
RLDRAIN
DRAIN
2
c.ca n12 n8 = 1.5e-9
c.cb n15 n14 = 1.5e-9
c.cin n6 n8 = 28.5e-10
RSLC2
51
ISCL
spe.ebreak n11 n7 n17 n18 = 64.8
9
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
GATE
spe.eds n14 n8 n5 n8 = 1 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
LGATE
RLGATE
-
ESG
+
EVTEMP
RGATE + 18 -
22
20
6
8
6
EVTHRES
+ 19 -
8
CIN
50
RDRAIN
16
21
MMED
MSTRO
8
DBREAK
11
MWEAK
EBREAK
+
17
18
-
7
DBODY
LSOURCE
SOURCE
3
RSOURCE
i.it n8 n17 = 1
l.lgate n1 n9 = 5e-9
12
S1A
13
8
S2A
14
13
15
17
RBREAK
RLSOURCE
18
l.ldrain n2 n5 = 1.00e-9
l.lsource n3 n7 = 2e-9
res.rlgate n1 n9 = 50
res.rldrain n2 n5 = 10
CA
S1B
13
+
EGS
6
8
S2B
CB
+
EDS
5
8
14
IT
RVTEMP
19
-
VBAT
+
res.rlsource n3 n7 = 20
-
-
8
22
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=0.92e-3,tc2=-0.35e-6
res.rdrain n50 n16 = 4.2e-3, tc1=7.92e-3,tc2=3.4e-5
res.rgate n9 n20 = 2.7
res.rslc1 n5 n51 = 1e-6, tc1=2.8e-3,tc2=1e-7
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 4e-3, tc1=4.0e-3,tc2=1e-6
res.rvthres n22 n8 = 1, tc1=-2.5e-3,tc2=-1e-5
res.rvtemp n18 n19 = 1, tc1=-2.3e-3,tc2=1.5e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/200))** 3))
}
?2010 Fairchild Semiconductor Corporation
RVTHRES
FDD14AN06LA0_F085 Rev. C
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