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参数资料
| 型号： | FDD2670 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 3.6A D-PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 130 毫欧 @ 3.6A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 43nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1228pF @ 100V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252 |
| 包装： | 带卷 (TR) |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 1)
W DSS
Single Pulse Drain-Source
V DD = 100 V,
I D = 3.6 A
375
mJ
Avalanche Energy
I AR
Maximum Drain-Source Avalanche
3.6
A
Current
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
200
214
V
mV/ ° C
I DSS
I GSSF
I GSSR
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V DS = 160 V,
V GS = 20 V,
V GS = –20 V,
V GS = 0 V
V DS = 0 V
V DS = 0 V
1
100
–100
μ A
NA
NA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
I D(on)
g FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V DS = V GS , I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V GS = 10 V, I D = 3.6 A
V GS = 10 V, I D = 3.6 A T J = 125 ° C
V GS = 10 V, V DS = 5 V
V DS = 5 V,
I D = 3.6 A
2
20
4
-10
100
205
15
4.5
130
275
V
mV/ ° C
m ?
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 100 V,
f = 1.0 MHz
V GS = 0 V,
1228
112
17
PF
PF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 100 V,
V GS = 10 V,
V DS = 100 V,
V GS = 10 V
I D = 1 A,
R GEN = 6 ?
I D = 3.6 A,
13
8
30
25
27
7
23
16
48
40
43
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
10
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
2.1
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V, I S = 2.1 A
(Note 2)
0.7
1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) R θ JA = 40oC/W when
mounted on a 1in2 pad of
b) R θ JA = 96oC/W on a
minimum mounting pad.
2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
3. I SD ≤ 3A, di/dt ≤ 100A/ μ s, V DD ≤ BV DSS , Starting T J = 25 ° C
FDD2670 Rev C1(W)
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相关代理商/技术参数 |
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| FDD26AN06A0 | 功能描述:MOSFET 60V 36A 26 OHM N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD26AN06A0_11 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 36A, 26m?? |
| FDD26AN06A0_F085 | 功能描述:MOSFET 60V N-CHAN PwrTrench 60V 36A 26mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD3 | 制造商:Cooper Crouse-Hinds 功能描述: |
| FDD300004 | 功能描述:OSC 133MHZ 3.3V SMD RoHS:是 类别:晶体和振荡器 >> 振荡器 系列:SaRonix-eCera™ FD 标准包装:1 系列:VG-4512CA 类型:VCXO 频率:153.6MHz 功能:三态（输出启用） 输出:LVPECL 电源电压:3.3V 频率稳定性:- 工作温度:-40°C ~ 85°C 电流 - 电源（最大）:60mA 额定值:- 安装类型:表面贴装 尺寸/尺寸:0.276" L x 0.197" W（7.00mm x 5.00mm） 高度:0.071"（1.80mm） 封装/外壳:6-SMD，无引线（DFN，LCC） 包装:Digi-Reel® 电流 - 电源（禁用）（最大）:- 其它名称:SER3790DKR |
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