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| 型号： | FDD8444 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 145A DPAK |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 145A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.2 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 116nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6195pF @ 25V |
| 功率 - 最大： | 153W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
| 其它名称： | FDD8444DKR |
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
40
±20
Units
V
V
I D
Drain Current Continuous (V GS = 10V)
Continuous (V GS = 10V, with R θ JA = 52 o C/W)
(Note 1)
145
20
A
Pulsed
Figure 4
E AS
P D
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25 o C
(Note 2)
535
153
1.02
mJ
W
W/ o C
T J , T STG Operating and Storage Temperature
Thermal Characteristics
-55 to +175
o C
Thermal Resistance, Junction to Ambient TO-252, 1in copper pad area
R θ JC
R θ JA
Thermal Resistance, Junction to Case
2
0.98
52
o
o
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDD8444
Device
FDD8444
Package
TO-252AA
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
40
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 32V
V GS = 0V
V GS = ±20V
T J = 150 o C
-
-
-
-
-
-
1
250
±100
μ A
nA
On Characteristics
V GS(th)
r DS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V GS = V DS , I D = 250 μ A
I D = 50A, V GS = 10V
I D = 50A, V GS = 10V,
T J = 175 o C
2
-
-
2.5
4
7.2
4
5.2
9.4
V
m Ω
Dynamic Characteristics
C iss
C oss
C rss
R G
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
f = 1MHz
V GS = 0 to 10V
-
-
-
-
-
6195
585
332
1.9
89
-
-
-
-
116
pF
pF
pF
Ω
nC
Q g(5)
Q g(TH)
Q gs
Q gs2
Q gd
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
V GS = 0 to 5V
V GS = 0 to 2V
V DD = 20V
I D = 50A
I g = 1.0mA
-
-
-
-
43
11
23
11
20
56
14.3
-
-
-
nC
nC
nC
nC
nC
FDD8444 Rev B (W)
2
www.fairchildsemi.com
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相关代理商/技术参数 |
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|---|---|
| FDD8444_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 40V, 50A, 5.2mз |
| FDD8444_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 50A, 5.2m?? |
| FDD8444_F085 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD8444L | 功能描述:MOSFET 40V N-Ch POWERTRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD8444L_F085 | 功能描述:MOSFET 40V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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