参数资料
型号: FDH5500_F085
厂商: Fairchild Semiconductor
文件页数: 5/7页
文件大小: 0K
描述: MOSFET N-CH 55V 75A TO-247
标准包装: 150
系列: UltraFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 75A
开态Rds(最大)@ Id, Vgs @ 25° C: 7 毫欧 @ 75A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 268nC @ 20V
输入电容 (Ciss) @ Vds: 3565pF @ 25V
功率 - 最大: 375W
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247
包装: 管件
Typical Characteristics
1000
1000
100
10
100us
1ms
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
STARTING T J = 25 o C
10ms
1
OPERATION IN THIS
AREA MAY BE
SINGLE PULSE
TJ = MAX RATED
DC
10
STARTING T J = 150 o C
0.1
1
LIMITED BY rDS(on) TC = 25oC
10 100
V DS , DRAIN TO SOURCE VOLTAGE (V)
200
1
0.01
0.1
1 10 100
t AV , TIME IN AVALANCHE (ms)
1000 5000
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
160
V GS = 10V
PULSE DURATION = 80 μ s
120
80
V DD = 5V
120
80
V GS = 6V
DUTY CYCLE = 0.5% MAX
V GS = 5.5V
40
T J = 175 o C
T J = -55 o C
40
V GS = 5V
T J = 25 o C
V GS = 4.5V
0
0
1 2 3 4 5 6
V GS , GATE TO SOURCE VOLTAGE (V)
7
0
0
1 2 3 4
V DS , DRAIN TO SOURCE VOLTAGE (V)
5
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
40
I D = 75A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
2.2
2.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
30
1.8
1.6
20
10
T J = 175 o C
1.4
1.2
1.0
T J = 25 C
0
4
o
6 8
V GS , GATE TO SOURCE VOLTAGE ( V )
10
0.8
0.6
-80
I D = 75A
V GS = 10V
-40 0 40 80 120 160
T J , JUNCTION TEMPERATURE ( o C )
200
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDH5500_F085 Rev. A1
5
www.fairchildsemi.com
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