- 您现在的位置：买卖IC网 > Datasheet目录419 > FDI2532 (Fairchild Semiconductor)MOSFET N-CH 150V 79A TO-262AB Datasheet资料下载
参数资料
| 型号： | FDI2532 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/13页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 79A TO-262AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 79A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 33A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 107nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5870pF @ 25V |
| 功率 - 最大： | 310W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | I2PAK |
| 包装： | 管件 |
Package Marking and Ordering Information
Device Marking
FDB2532
FDP2532
Device
FDB2532
FDP2532
Package
D 2 -PAK
TO-220
Reel Size
3 30 mm
T ube
Tape Width
24 mm
N/A
Quantity
800 units
50 units
Electrical Characteristics T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
150
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 120V
V GS = 0V
V GS = ± 20V
T C = 150 o C
-
-
-
-
-
-
1
250
± 100
μ A
nA
On Characteristics
V GS(TH)
r DS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V GS = V DS , I D = 250 μ A
I D = 33A, V GS = 10V
I D = 16A, V GS = 6V,
I D = 33A, V GS = 10V,
T C = 175 o C
2
-
-
-
-
0.014
0.016
0.040
4
0.016
0.024
0.048
V
?
Dynamic Characteristics
C ISS
C OSS
C RSS
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
V GS = 0V to 10V
-
-
-
-
5870
615
135
82
-
-
-
107
pF
pF
pF
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0V to 2V
V DD = 75V
I D = 33A
I g = 1.0mA
-
-
-
-
11
23
13
19
14
-
-
-
nC
nC
nC
nC
Resistive Switching Characteristics (V GS = 10V)
t ON
t d(ON)
t r
t d(OFF)
t f
t OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 75V, I D = 33A
V GS = 10V, R GS = 3.6 ?
-
-
-
-
-
-
-
16
30
39
17
-
69
-
-
-
-
84
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
t rr
Q RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I SD = 33A
I SD = 16A
I SD = 33A, dI SD /dt= 100A/ μ s
I SD = 33A, dI SD /dt= 100A/ μ s
-
-
-
-
-
-
-
-
1.25
1.0
105
327
V
V
ns
nC
Notes:
1: Starting T J = 25°C, L = 0.5 mH, I AS = 40A.
2: Pulse Width = 100s
? 2002 Fairchild Semiconductor Corporation
FDP2532 / FDB2532 Rev. C 2
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDI33N25TU | MOSFET N-CH 250V 33A I2PAK |
| FDI3652 | MOSFET N-CH 100V 61A TO-262AA |
| FDI8441_F085 | MOSFET N-CH 40V 26A TO-262AB |
| FDI8441 | MOSFET N-CH 40V 80A TO-262AB |
| FDL100N50F | MOSFET N-CH 500V 100A TO-264 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDI2532_Q | 功能描述:MOSFET 150V N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDI33N25 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
| FDI33N25TU | 功能描述:MOSFET TBD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDI3632 | 功能描述:MOSFET 100V 80a 0.009 Ohms/VGS=10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDI3632FS | 制造商:Fairchild Semiconductor Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。