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| 型号： | FDL100N50F |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 100A TO-264 |
| 产品目录绘图： | MOSFET TO-264-3 |
| 标准包装： | 25 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 100A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 55 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 238nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 12000pF @ 25V |
| 功率 - 最大： | 2500W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-264-3，TO-264AA |
| 供应商设备封装： | TO-264 |
| 包装： | 管件 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
November 2013
FDL100N50F
N-Channel UniFET TM FRFET ? MOSFET
500 V, 100 A, 55 m Ω
Features
? R DS(on) = 43 m Ω (Typ.) @ V GS = 10 V, I D = 50 A
? Low Gate Charge (Typ. 238 nC)
? Low C rss (Typ. 64 pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
? RoHS Compliant
Applications
? Uninterruptible Power Supply
? AC-DC Power Supply
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery perfor-
mance of UniFET FRFET ? MOSFET has been enhanced by
lifetime control. Its trr is less than 100nsec and the reverse dv/dt
immunity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
G
G
D
S
TO-264
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDL100N50F
500
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±30
100
60
V
A
I DM
Drain Current
- Pulsed
(Note 1)
400
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
5000
100
73.5
20
2500
20
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDL100N50F
0.05
30
Unit
o C/W
?2009 Fairchild Semiconductor Corporation
FDL100N50F Rev. C1
1
www.fairchildsemi.com
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