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| 型号： | FDMA1024NZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 20V 6-MICROFET |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 54 毫欧 @ 5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 500pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMA1024NZDKR |
Ma y 2010
FDMA1024NZ
Dual N-Channel PowerTrench ? MOSFET
20 V, 5.0 A, 54 m ?
Features
Max r DS(on) = 54 m ? at V GS = 4.5 V, I D = 5.0 A
Max r DS(on) = 66 m ? at V GS = 2.5 V, I D = 4.2 A
Max r DS(on) = 82 m ? at V GS = 1.8 V, I D = 2.3 A
Max r DS(on) = 114 m ? at V GS = 1.5 V, I D = 2.0 A
HBM ESD protection level = 1.6 kV (Note 3)
Low pr o file - 0.8 mm ma x imum - in the new package
MicroFET 2x2 mm
RoHS Compliant
Free from halogenated compounds and ant imony
oxides
General Description
This device is designed specifically as a single package solution
for d u al switching r e quirements in cellular handset and other
ultra-portable applications. I t featu r es tw o independe n t
N-Channel MOSFETs with low on-state resistance for minimum
conduction losses.
The Micr o FET 2X2 packa g e offers exceptio n al th e rmal
performance for its physical size and is well suited to linear mode
applications.
Applications
Baseband Switch
Loadswitch
DC-DC Conversion
PIN 1
S1
G1
D2
S1
1
6
D1
D1
D2
G1
2
5
G2
D1
G2 S2
D2
3
4
S2
MicroFET 2x2
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
Parameter
Ratings
Units
V DS
V GS
I D
P D
T J , T STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1a)
(Note 1b)
20
±8
5.0
6.0
1.4
0.7
–55 to +150
V
V
A
W
° C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction to Ambient
(Note 1a)
86 (Single Operation)
R θ JA
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1b)
(Note 1c)
(Note 1d)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
°C/W
Package Marking and Ordering Information
Device Marking
024
Device
FDMA1024NZ
Package
MicroFET 2X2
Reel Size
7 ”
Tape Width
8 mm
Quantity
3000 units
?2010 Fairchild Semiconductor Corporation
FDMA1024NZ Rev.B 4
1
www.fairchildsemi.com
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| FDMA1025P | MOSFET P-CH DUAL 20V 3.1A MLP2X2 |
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| FDMA1028NZ | IC MOSFET N-CH DUAL MICROFET 2X2 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMA1025P | 功能描述:MOSFET -20V Dual P-CH PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA1025P_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench㈢ MOSFET |
| FDMA1027P | 功能描述:MOSFET MLP 2X2 DUAL PCH POWER TRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA1027P_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench MOSFET |
| FDMA1027P_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench㈢ MOSFET |
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