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参数资料
| 型号： | FDMA1027P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V DUAL MICROFET |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 435pF @ 10V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMA1027PDKR |
May 20 10
FDMA1027P
Dual P-Channel PowerTrench ? MOSFET
General Description
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features two
independent P-Channel MOSFETs with low on-state
resistance for minimum conduction losses. When
connected in the typical common source configuration,
bi-directional current flow is possible.
The MicroFET 2x2 package offers exceptional thermal
performance for it's physical size and is well suited to linear
mode applications.
Features
? -3.0 A, -20V. R DS(ON) = 120 m : @ V GS = -4.5 V
R DS(ON) = 160 m : @ V GS = -2.5 V
R DS(ON) = 240 m : @ V GS = -1.8 V
? Low Profile - 0.8 mm maximun - in the new package
MicroFET 2x2 mm
? RoHS Compliant
Free from halogenated compounds and antimony
oxides
PIN 1
S1 G1 D2
S1
1
6
D1
D1
D2
G1
D2
2
3
5
4
G2
S2
MicroFET 2X2
D1 G2
S2
Absolute Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Ratings
-20
r 8
Units
V
V
I D
P D
Drain Current -Continuous
-Pulsed
Power dissipation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
- 3.0
-6
1.4
0.7
1.8
A
W
(Note 1d)
0.8
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
o C
Thermal Characteristics
R T JA
Thermal Resistance for Single Operation , Junction-to-Ambient
( Not e 1a)
86
R T JA
R T JA
R T JA
Thermal Resistance for Single Operation , Junction-to-Ambient
Thermal Resistance for Dual Operation , Junction-to-Ambient
Thermal Resistance for Dual Operation , Junction-to-Ambient
(Note 1b )
(Note 1c)
(Note 1d)
173
69
151
o
C/W
Package Marking and Ordering Information
Device Marking
027
Device
FDMA1027P
Reel Size
7 "
Tape Width
8 mm
Quantity
3000 units
?20 1 0 Fairchild Semiconductor Corporation
1
FDMA1027P Rev. D 5
相关PDF资料 |
PDF描述 |
|---|---|
| FDMA1028NZ | IC MOSFET N-CH DUAL MICROFET 2X2 |
| FDMA1029PZ | IC MOSFET P-CH DUAL MICROFET 2X2 |
| FDMA1032CZ | IC MOSFET N/P-CHAN MICROFET 2X2 |
| FDMA2002NZ | IC MOSFET N-CH DUAL MICROFET 2X2 |
| FDMA291P | MOSFET P-CH 20V 6.6A MFET 2X2 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMA1027P_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench MOSFET |
| FDMA1027P_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench㈢ MOSFET |
| FDMA1027P_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMA1027PT | 功能描述:MOSFET -20V Dual P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA1028NZ | 功能描述:MOSFET 20V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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