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| 型号： | FDMA1032CZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET N/P-CHAN MICROFET 2X2 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.7A，3.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 68 毫欧 @ 3.7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 340pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMA1032CZDKR |
FDMA1032CZ
20V Complementary PowerTrench MOSFET
May 20 10
tm
General Description
This device is designed specifically as a single package
Features
Q1: N-Channel
solution for a DC/DC 'Switching' MOSFET in cellular
3.7 A, 20V.
R DS(ON) = 68 m
@ V GS = 4.5V
handset
and
other
ultra-portable
applications.
It
R DS(ON) = 86 m
@ V GS = 2.5V
features an independent N-Channel & P-Channel
Q2: P-Channel
MOSFET with low on-state resistance for minimum
conduction losses. The gate charge of each MOSFET
–3.1 A, –20V. R DS(ON) = 95 m
R DS(ON) = 141 m
@ V GS = –4.5V
@ V GS = –2.5V
is also minimized to allow high frequency switching
directly from the controlling device. The MicroFET 2x2
package offers exceptional thermal performance for its
physical size and is well suited to switching applications.
Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
HBM ESD protection level > 2 kV (Note 3)
RoHS Compliant
Free from halogenated compounds and antimony
oxides
PIN 1
S1 G1
D2
S1
1
6
D1
D1
D2
G1
D2
2
3
5
4
G2
S2
D1 G2 S2
MicroFET 2x2
T A =25 C unless otherwise noted
Absolute Maximum Ratings
o
Symbol
V DS
V GS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Q1
20
12
Q2
–20
±12
Units
V
V
I D
Drain Current
– Continuous
– Pulsed
(Note 1a)
3.7
6
–3.1
–6
A
P D
Power Dissipation for Single Operation
(Note 1a)
1.4
W
(Note 1b)
0.7
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
86 (Single Operation)
R
R
R
JA
JA
JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1b)
(Note 1c)
(Note 1d)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
C/W
Package Marking and Ordering Information
Device Marking
032
Device
FDMA1032CZ
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
20 10 Fairchild Semiconductor Corporation
FDMA1032CZ Rev B 4 (W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDMA2002NZ | IC MOSFET N-CH DUAL MICROFET 2X2 |
| FDMA291P | MOSFET P-CH 20V 6.6A MFET 2X2 |
| FDMA3023PZ | MOSFET P-CH DUAL 30V MICROFET6 |
| FDMA3028N | MOSFET N-CH 30V DUAL 6MICROFET |
| FDMA410NZ | MOSFET N-CH 20V 9.5A 6-MICROFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMA1032CZ | 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET 20V MICROFET 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET, 20V, MICROFET |
| FDMA1032CZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:20V Complementary PowerTrench㈢ MOSFE |
| FDMA1430JP | 功能描述:MOSFET P-Chan -30V -2.9A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA2002NZ | 功能描述:MOSFET 30V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA2002NZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET |
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