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| 型号： | FDMA2002NZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET N-CH DUAL MICROFET 2X2 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 123 毫欧 @ 2.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 220pF @ 15V |
| 功率 - 最大： | 650mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMA2002NZDKR |
May 20 0
t
tm
FDMA2002NZ
Dual N-Channel PowerTrench MOSFET
General Description
Features
tm
tm
This device is designed specifically as a single package
solution for dual switching requirements in cellular
2.9 A, 30 V R DS(ON) = 123 m
R DS(ON) = 140 m
@ V GS = 4.5 V
@ V GS = 3.0 V
handset
and
other
ultra-portable
applications.
It
R DS(ON) = 163 m
@ V GS = 2.5 V
features two independent N-Channel MOSFETs with
low on-state resistance for minimum conduction losses.
Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
The
MicroFET
2x2
offers
exceptional
thermal
HBM ESD protection level = 1.8kV (Note 3)
performance for its physical size and is well suited to
linear mode applications.
RoHS Compliant
Free from halogenated compounds and antimony
oxides
PIN 1
S1 G1
D2
D1
D2
S1
G1
1
2
6
5
D1
G2
D1 G2 S2
D2
3
4
S2
MicroFET 2x2
T A =25 C unless otherwise noted
Absolute Maximum Ratings
o
Symbol
V DS
V GS
I D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (T C = 25°C, V GS = 4.5V)
– Continuous (T C = 25°C, V GS = 2.5V)
– Pulsed
Ratings
30
12
2.9
2.7
10
Units
V
V
A
P D
T J , T STG
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Temperature
(Note 1a)
(Note 1b)
1.5
0.65
–55 to +150
W
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
83 (Single Operation)
R
R
R
JA
JA
JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1b)
(Note 1c)
(Note 1d)
193 (Single Operation)
68 (Dual Operation)
145 (Dual Operation)
C/W
Package Marking and Ordering Information
20
Device Marking
002
Fairchild Semiconductor Corporation
Device
FDMA2002NZ
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
FDMA2002NZ Rev B (W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMA2002NZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET |
| FDMA291P | 功能描述:MOSFET -20V Single P-Ch. PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA291P_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel 1.8V Specified PowerTrench㈢ MOSFET |
| FDMA2P857 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMA3023PZ | 功能描述:MOSFET 30V 2.9A Dual P Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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