- 您现在的位置：买卖IC网 > Datasheet目录419 > FDMA2002NZ (Fairchild Semiconductor)IC MOSFET N-CH DUAL MICROFET 2X2 Datasheet资料下载
参数资料
| 型号： | FDMA2002NZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET N-CH DUAL MICROFET 2X2 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 123 毫欧 @ 2.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 220pF @ 15V |
| 功率 - 最大： | 650mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMA2002NZDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV DSS
BV DSS
T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = 250 A
I D = 250 A, Referenced to 25°C
30
25
V
mV/°C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage Current
V DS = 24 V,
V GS = ± 12 V,
V GS = 0 V
V DS = 0 V
1
±10
A
A
On Characteristics
V GS(th)
V GS(th)
T J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V DS = V GS , I D = 250 A
I D = 250 A, Referenced to 25°C
0.4
1.0
–3
1.5
V
mV/ C
V GS = 4.5V, I D = 2.9A
V GS = 3.0V, I D = 2.7A
75
84
123
140
R DS(on)
Static Drain–Source
On–Resistance
V GS = 2.5V, I D = 2.5A
V GS = 4.5V, I D = 2.9A, T C = 85°C
92
95
163
166
m
Dynamic Characteristics
V GS = 3.0V, I D = 2.7A, T C = 150°C
V GS = 2.5V, I D = 2.5A, T C = 150°C
138
150
203
268
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 15 V,
f = 1.0 MHz
V GS = 0 V,
190
30
20
220
40
30
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 15 V,
V GS = 4.5 V,
V DS = 15 V,
V GS = 4.5 V
I D = 1 A,
R GEN = 6
I D = 2.9 A,
6
8
12
2
2.4
0.35
12
16
21
10
3.0
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
0.75
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Source – Drain Diode Forward Current
2 .9
A
V SD
t rr
Q rr
Source – Drain Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I S = 2.0 A
I S = 1.1 A
I F = 2.9 A,
dI F /dt = 100 A/μs
0.9
0.8
10
2
1.2
1.2
V
ns
nC
FDMA2002NZ Rev B (W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDMA291P | MOSFET P-CH 20V 6.6A MFET 2X2 |
| FDMA3023PZ | MOSFET P-CH DUAL 30V MICROFET6 |
| FDMA3028N | MOSFET N-CH 30V DUAL 6MICROFET |
| FDMA410NZ | MOSFET N-CH 20V 9.5A 6-MICROFET |
| FDMA420NZ | MOSFET N-CH 20V 5.7A MICROFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMA2002NZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET |
| FDMA291P | 功能描述:MOSFET -20V Single P-Ch. PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA291P_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel 1.8V Specified PowerTrench㈢ MOSFET |
| FDMA2P857 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMA3023PZ | 功能描述:MOSFET 30V 2.9A Dual P Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。