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参数资料
| 型号： | FDMA1032CZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET N/P-CHAN MICROFET 2X2 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.7A，3.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 68 毫欧 @ 3.7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 340pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMA1032CZDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min
Typ
Max Units
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Source - Drain Diode Forward Current
Q 1
1.1
A
Q2
–1.1
V SD
t rr
Source - Drain Diode Forward
Voltage
Diode Reverse Recovery
V GS = 0 V, I S = 1.1 A
V GS = 0 V, I S = –1.1 A
Q1
(Note 2)
(Note 2)
Q1
Q2
Q1
0.7
–0.8
11
1.2
–1.2
V
ns
Time
I F = 3.7 A, dI F /dt = 100 A/μs
Q2
25
Q rr
Diode Reverse Recovery
Charge
Q2
I F = –3.1 A, dI F /dt = 100 A/μs
Q1
Q2
2
9
nC
Notes:
1. R JA is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R JC is guaranteed by design while R
user's board design.
(a) R JA = 86 °C/W when mounted on a 1 in 2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.
JA is
determined by the
(b) R
(c) R
(d) R
JA
JA
JA
= 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.
= 69 o C/W when mounted on a 1 in 2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.
= 151 o C/W when mounted on a minimum pad of 2 oz copper. For dual operation.
a)86 o C/W when
mounted on a 1
in 2 pad of 2 oz
copper.
b)173 o C/W when
mounted on a
minimum pad of 2
oz copper.
c)69 o C/W when
mounted on a 1 in 2
pad of 2 oz copper.
d)151 o C/W when
mounted on a
minimum pad of 2 oz
copper.
2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDMA1032CZ Rev B 4 (W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDMA2002NZ | IC MOSFET N-CH DUAL MICROFET 2X2 |
| FDMA291P | MOSFET P-CH 20V 6.6A MFET 2X2 |
| FDMA3023PZ | MOSFET P-CH DUAL 30V MICROFET6 |
| FDMA3028N | MOSFET N-CH 30V DUAL 6MICROFET |
| FDMA410NZ | MOSFET N-CH 20V 9.5A 6-MICROFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMA1032CZ | 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET 20V MICROFET 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET, 20V, MICROFET |
| FDMA1032CZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:20V Complementary PowerTrench㈢ MOSFE |
| FDMA1430JP | 功能描述:MOSFET P-Chan -30V -2.9A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA2002NZ | 功能描述:MOSFET 30V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA2002NZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET |
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