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| 型号： | FDMA1028NZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET N-CH DUAL MICROFET 2X2 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 68 毫欧 @ 3.7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 340pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMA1028NZDKR |
January 2013
FDMA1028NZ
Dual N-Channel PowerTrench MOSFET
General Description
Features
This device is designed specifically as a single package
solution for dual switching requirements in cellular
3.7 A, 20V.
R DS(ON) = 68 m
R DS(ON) = 86 m
@ V GS = 4.5V
@ V GS = 2.5V
handset
and
other
ultra-portable
applications.
It
Low profile – 0.8 mm maximum – in the new package
features two independent N-Channel MOSFETs with
low on-state resistance for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
PIN 1
MicroFET 2x2 mm
HBM ESD protection level > 2kV (Note 3)
RoHS Compliant
Free from halogenated compounds and antimony
oxides
S1 G1
D2
D1
D2
S1
G1
1
2
6
5
D1
G2
D1 G2 S2
MicroFET 2x2
D2
3
4
S2
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
20
12
Units
V
V
I D
Drain Current
– Continuous
– Pulsed
(Note 1a)
3.7
6
A
P D
Power Dissipation for Single Operation
(Note 1a)
1.4
W
(Note 1b)
0.7
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
86 (Single Operation)
R
R
R
JA
JA
JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1b)
(Note 1c)
(Note 1d)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
C/W
Package Marking and Ordering Information
Device Marking
028
Device
FDMA1028NZ
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
20 3 Fairchild Semiconductor Corporation
FDMA1028NZ Rev B 6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMA1028NZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET |
| FDMA1028NZ_F021 | 功能描述:MOSFET NCh 80V 171A 3.9mOhm PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA1029PZ | 功能描述:MOSFET -20V Dual P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA1029PZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench㈢ MOSFET |
| FDMA1032CZ | 功能描述:MOSFET 20V Complementary PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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