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参数资料
| 型号： | FDMA1025P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 20V 3.1A MLP2X2 |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 155 毫欧 @ 3.1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.8nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 450pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMA1025PDKR |
May 20
FDMA1025P
Dual P-Channel PowerTrench ? MOSFET
– 20V, – 3.1A, 155m
tm
Features
General Description
Max r DS(on) = 155m
Max r DS(on) = 220m
at V GS = – 4.5V, I D = – 3.1A
at V GS = – 2.5V, I D = – 2.3A
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra -
portable applications. It features two independent P-Channel
Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
RoHS Compliant
Free from halogenated compounds and antimony
oxides
MOSFETs with low on-state resistance for minimum conduction
losses. When connected in the typical common source
configuration, bi-directional current flow is possible.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and well suited to linear mode
applications.
Application
DC - DC Conversion
PIN 1
S1
G1
D2
D1
D2
S1
G1
1
2
6
5
D1
G2
D2 3
4
S2
D1
G2
S2
MicroFET 2X2
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
– 20
±12
Units
V
V
I D
P D
T J , T STG
Drain Current -Continuous
-Pulsed
Power Dissipation for Single Operation
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1a)
(Note 1b)
– 3.1
– 6
1.4
0.7
– 55 to +150
A
W
° C
Thermal Characteristics
R
JA
Thermal Resistance Single Operation, Junction to Ambient
(Note 1a)
86
R
R
R
JA
JA
JA
Thermal Resistance Single Operation, Junction to Ambient
Thermal Resistance Dual Operation, Junction to Ambient
Thermal Resistance Dual Operation, Junction to Ambient
(Note 1b)
(Note 1c)
(Note 1d)
173
69
151
°C/W
Package Marking and Ordering Information
Device Marking
025
Device
FDMA1025P
Package
MicroFET 2X2
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
?20 10 Fairchild Semiconductor Corporation
FDMA1025P Rev.B 4
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMA1027PT | MOSFET P-CH 20V DUAL MICROFET |
| FDMA1027P | MOSFET P-CH 20V DUAL MICROFET |
| FDMA1028NZ | IC MOSFET N-CH DUAL MICROFET 2X2 |
| FDMA1029PZ | IC MOSFET P-CH DUAL MICROFET 2X2 |
| FDMA1032CZ | IC MOSFET N/P-CHAN MICROFET 2X2 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMA1025P_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench㈢ MOSFET |
| FDMA1027P | 功能描述:MOSFET MLP 2X2 DUAL PCH POWER TRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA1027P_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench MOSFET |
| FDMA1027P_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench㈢ MOSFET |
| FDMA1027P_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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