- 您现在的位置：买卖IC网 > Datasheet目录419 > FDMA1025P (Fairchild Semiconductor)MOSFET P-CH DUAL 20V 3.1A MLP2X2 Datasheet资料下载
参数资料
| 型号： | FDMA1025P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 20V 3.1A MLP2X2 |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 155 毫欧 @ 3.1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.8nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 450pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMA1025PDKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
BV DSS
T J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I D = – 250 A, V GS = 0V
I D = – 250 A, referenced to 25°C
– 20
14
V
mV/ ° C
I DSS
Zero Gate Voltage Drain Current
V DS = – 16V,
V GS = 0V
T J = 125°C
– 1
– 100
A
I GSS
Gate to Source Leakage Current
V GS = ±12V, V DS = 0V
±100
nA
On Characteristics
V GS(th)
V GS(th)
T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = – 250 A
I D = – 250 A, referenced to 25°C
– 0.4
– 0.9
– 3.8
– 1.5
V
mV/°C
V GS = – 4.5V, I D = – 3.1A
88
155
r DS(on)
Drain to Source On Resistance
V GS = – 2.5V, I D = – 2.3A
144
220
m
V GS = – 4.5V, I D = – 3.1A,T J = 125°C
121
220
g FS
Forward Transconductance
V DS = – 5V, I D = – 3.1A
6.2
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = – 10V, V GS = 0V,
f = 1MHz
340
80
45
450
105
70
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g(TOT)
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 4.5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = – 10V, I D = – 3.1A
V GS = – 4.5V, R GEN = 6
V GS = 0V to – 4.5V V DD = – 10V
I D = – 3.1A
5
14
13
8
3.4
0.8
1.0
10
26
24
16
4.8
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
I S
Maximum Continuous Source-Drain Diode Forward
– 1.1
A
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = – 1.1A
(Note 2)
– 0.8
– 1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = – 3.1A, di/dt = 100A/ s
17
10
26
15
ns
nC
FDMA1025P Rev.B 4
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMA1027PT | MOSFET P-CH 20V DUAL MICROFET |
| FDMA1027P | MOSFET P-CH 20V DUAL MICROFET |
| FDMA1028NZ | IC MOSFET N-CH DUAL MICROFET 2X2 |
| FDMA1029PZ | IC MOSFET P-CH DUAL MICROFET 2X2 |
| FDMA1032CZ | IC MOSFET N/P-CHAN MICROFET 2X2 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMA1025P_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench㈢ MOSFET |
| FDMA1027P | 功能描述:MOSFET MLP 2X2 DUAL PCH POWER TRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA1027P_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench MOSFET |
| FDMA1027P_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench㈢ MOSFET |
| FDMA1027P_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。