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| 型号： | FDMA1027PT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V DUAL MICROFET |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 435pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMA1027PTDKR |
May 2009
FDMA1027PT
Dual P-Channel PowerTrench ? MOSFET
–20 V, –3 A, 120 m
Features
General Description
Max r DS(on) = 120 m
Max r DS(on) = 160 m
Max r DS(on) = 240 m
at V GS = -4.5 V, I D = -3.0 A
at V GS = -2.5 V, I D = -2.5 A
at V GS = -1.8 V, I D = -1.0 A
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable applications. It features two independent
P-Channel MOSFETs with low on-state resistance for minimum
conduction losses. When connected in the typical common
Low profile - 0.55 mm maximum - in the new package
MicroFET 2x2 Thin
RoHS Compliant
Free from halogenated compounds and antimony
oxides
source configuration, bi-directional current flow is possible.
The MicroFET 2x2 Thin package offers exceptional thermal
performance for it's physical size and is well suited to linear
mode applications.
Applications
Battery management
Load switch
Battery protection
PIN 1
S1
G1
D2
D1
D2
S1
G1
1
2
6
5
D1
G2
D2 3
4
S2
D1
G2
S2
MicroFET 2X2 Thin
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
-20
±8
Units
V
V
I D
Drain Current
-Continuous
-Pulsed
T A = 25 °C
(Note 1a)
-3
-6
A
P D
Power Dissipation for Single Operation
Power Dissipation for Single Operation
T A = 25 °C
T A = 25 °C
(Note 1a)
(Note 1b)
1.4
0.7
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R
JA
Thermal Resistance, Junction to Ambient (Single Operation)
(Note 1a)
86
R
R
R
JA
JA
JA
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Dual Operation)
Thermal Resistance, Junction to Ambient (Dual Operation)
(Note 1b)
(Note 1c)
(Note 1d)
173
69
151
°C/W
Package Marking and Ordering Information
Device Marking
27
Device
FDMA1027PT
Package
MicroFET 2x2 Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
?2009 Fairchild Semiconductor Corporation
FDMA1027PT Rev.B4
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMA1027P | MOSFET P-CH 20V DUAL MICROFET |
| FDMA1028NZ | IC MOSFET N-CH DUAL MICROFET 2X2 |
| FDMA1029PZ | IC MOSFET P-CH DUAL MICROFET 2X2 |
| FDMA1032CZ | IC MOSFET N/P-CHAN MICROFET 2X2 |
| FDMA2002NZ | IC MOSFET N-CH DUAL MICROFET 2X2 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMA1028NZ | 功能描述:MOSFET 20V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA1028NZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET |
| FDMA1028NZ_F021 | 功能描述:MOSFET NCh 80V 171A 3.9mOhm PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA1029PZ | 功能描述:MOSFET -20V Dual P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA1029PZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench㈢ MOSFET |
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