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参数资料
| 型号： | FDMA1027PT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V DUAL MICROFET |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 435pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMA1027PTDKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
BV DSS
T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = -250 A, V GS = 0 V
I D = -250 A, referenced to 25 °C
V DS = -16 V, V GS = 0 V
V GS = ±8 V, V DS = 0 V
-20
-12
-1
±100
V
mV /° C
A
nA
On Characteristics
V GS(th)
V GS(th)
T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = -250 A
I D = -250 A, referenced to 25 °C
-0.4
-0.7
2
-1.3
V
mV/°C
V GS = -4.5 V, I D = -3.0 A
V GS = -2.5 V, I D = -2.5 A
90
120
120
160
r DS(on)
Drain to Source On Resistance
V GS = -1.8 V, I D = -1.0 A
172
240
m
V GS = -4.5 V, I D = -3.0 A ,
T J = 125 °C
118
160
I D(on)
g FS
On to State Drain Current
Forward Transconductance
V GS = -4.5 V, V DS = -5 V
V DS = -5 V, I D = -3.0 A
-20
7
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -10 V, V GS = 0 V,
f = 1 MHz
435
80
45
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = -10 V, I D = -1.0 A
V GS = -4.5 V, R GEN = 6
V DD = -10 V, I D = -3.0 A
V GS = -4.5 V
9
11
15
6
4
0.8
0.9
18
19
27
12
6
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
I S
Maximum continuous Source - Drain Diode Forward Current
- 1.1
A
V SD
Source to Drain Diode Forward Voltage
V GS = 0 V, I S = -1.1 A
(Note 2)
-0.8
-1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = -3.0 A, di/dt = 100 A/ s
17
6
ns
nC
?2009 Fairchild Semiconductor Corporation
FDMA1027PT Rev.B4
2
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FDMA1029PZ | 功能描述:MOSFET -20V Dual P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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