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参数资料
| 型号： | FDMA1024NZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 20V 6-MICROFET |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 54 毫欧 @ 5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 500pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMA1024NZDKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 16 V, V GS = 0 V
V GS = ±8 V, V DS = 0 V
20
19
1
±10
V
mV /° C
μ A
μ A
On Characteristics
V GS(th)
? V GS(th )
? T J
r DS(on)
g FS
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On-Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
V GS = 4.5 V, I D = 5.0 A
V GS = 2.5 V, I D = 4.2 A
V GS = 1.8 V, I D = 2.3 A
V GS = 1.5 V, I D = 2.0 A
V GS = 4.5 V, I D = 5.0 A, T J = 125 °C
V DD = 5 V, I D = 5.0 A
0.4
0.7
-3
37
43
52
67
51
16
1.0
54
66
82
114
75
V
mV/°C
m ?
S
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 10 V, V GS = 0 V,
f = 1 MHz
f = 1 MHz
375
70
40
4.3
500
95
65
pF
pF
pF
?
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = 10 V, I D = 5.0 A
V GS = 4.5 V, R GEN = 6 ?
V GS = 4.5 V, V DD = 10 V,
I D = 5.0 A
5.3
2.2
18
2.3
5.2
0.6
0.9
11
10
33
10
7.3
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
I F = 5.0 A, di/dt = 100 A/ μ s
I S
V SD
t rr
Q rr
Maximum Continuous Source - Drain Diode Forward Current
Source to Drain Diode Forward Voltage V GS = 0 V, I S = 1.1 A
Reverse Recovery Time
Reverse Recovery Charge
(Note 2)
0.7
19
5
1.1
1.2
35
10
A
V
ns
nC
?2010 Fairchild Semiconductor Corporation
FDMA1024NZ Rev.B 4
2
www.fairchildsemi.com
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| FDMA1025P | 功能描述:MOSFET -20V Dual P-CH PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| FDMA1027P_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench MOSFET |
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