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参数资料
| 型号： | FDMA1023PZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CHAN DUAL MICROFET2X2 |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 72 毫欧 @ 3.7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 655pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMA1023PZDKR |
FDMA1023PZ
Dual P-Channel PowerTrench ? MOSFET
–20V, –3.7A, 72m
Ma y 2009
tm
Features
General Description
Max r DS(on) = 72m
Max r DS(on) = 95m
Max r DS(on) = 130m
Max r DS(on) = 195m
at V GS = –4.5V, I D = –3.7A
at V GS = –2.5V, I D = –3.2A
at V GS = –1.8V, I D = –2.0A
at V GS = –1.5V, I D = –1.0A
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features two independent
P-Channel MOSFETs with low on-state resistance for minimum
conduction losses. When connected in the typical common
source configuration, bi-directional current flow is possible.
Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
HBM ESD protection level > 2kV typical (Note 3)
RoHS Compliant
Free from halogenated compounds and antimony
oxides
Pin 1
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
S1
G1
D2
D1
D2
S1
G1
1
2
6
5
D1
G2
D2 3
4
S2
MicroFET 2X2
D1
G2
S2
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
–20
±8
Units
V
V
I D
P D
T J , T STG
Drain Current -Continuous
-Pulsed
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1a)
(Note 1b)
–3.7
–6
1.5
0.7
–55 to +150
A
W
° C
Thermal Characteristics
R
JA
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1a)
86
R
R
R
JA
JA
JA
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
(Note 1b)
(Note 1c)
(Note 1d)
173
69
151
°C/W
Package Marking and Ordering Information
Device Marking
023
Device
FDMA1023PZ
Package
MicroFET 2X2
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
?200 9 Fairchild Semiconductor Corporation
FDMA1023PZ Rev.C 3
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMA1024NZ | MOSFET N-CH DUAL 20V 6-MICROFET |
| FDMA1025P | MOSFET P-CH DUAL 20V 3.1A MLP2X2 |
| FDMA1027PT | MOSFET P-CH 20V DUAL MICROFET |
| FDMA1027P | MOSFET P-CH 20V DUAL MICROFET |
| FDMA1028NZ | IC MOSFET N-CH DUAL MICROFET 2X2 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMA1023PZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench㈢ MOSFET |
| FDMA1024NZ | 功能描述:MOSFET 20V Dual N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA1025P | 功能描述:MOSFET -20V Dual P-CH PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA1025P_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench㈢ MOSFET |
| FDMA1027P | 功能描述:MOSFET MLP 2X2 DUAL PCH POWER TRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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