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参数资料
| 型号： | FDI2532 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/13页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 79A TO-262AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 79A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 33A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 107nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5870pF @ 25V |
| 功率 - 最大： | 310W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | I2PAK |
| 包装： | 管件 |
Typical Characteristics T C = 25°C unless otherwise noted
1000
100
10 μ s
100 μ s
200
100
STARTING T J = 25 o C
10
1
OPERATION I N HIS
AREA MAY BE
LIMITED BY r DS(ON)
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
DC
1ms
10ms
10
STARTING T J = 150 o C
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
0.1
1
1
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
100
300
0.001
0.01 0.1
t AV , TIME IN AVALANCHE (ms)
1
Figure 5. Forward Bias Safe Operating Area
180
NOTE: Refer to Fairchild Application Notes AN7515 and AN7517
Figure 6. Unclamped Inductive Switching
Capability
180
PULSE DURATION = 80 μ s
V GS = 10V
V GS = 7V
150
120
90
DUTY CYCLE = 0.5% MAX
V DD = 15V
T J = 175 o C
150
120
90
V GS = 6V
T C = 25 o C
60
30
T J = 25 o C
T J = -55 o C
60
30
V GS = 5V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0
0
3.0
3.5
4.0 4.5 5.0 5.5 6.0
6.5
0.0
1.0 2.0 3.0 4.0 5.0
6.0
18
17
16
15
14
13
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 6V
V GS = 10V
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
3.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
2.5
2.0
1.5
1.0
V GS = 10V, I D =33A
0.5
0
2 0
40
6 0
80
-80
-40
0 40 80 120
160
200
I D , DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
? 2002 Fairchild Semiconductor Corporation
FDP2532 / FDB2532 Rev. C 2
4
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FDI2532_Q | 功能描述:MOSFET 150V N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDI33N25 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
| FDI33N25TU | 功能描述:MOSFET TBD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDI3632 | 功能描述:MOSFET 100V 80a 0.009 Ohms/VGS=10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDI3632FS | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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