参数资料
型号: FDMA520PZ
厂商: Fairchild Semiconductor
文件页数: 3/6页
文件大小: 0K
描述: MOSFET P-CH 20V 7.3A MLP2X2
产品目录绘图: MicroFET 2x2, SC-75 Single
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 7.3A
开态Rds(最大)@ Id, Vgs @ 25° C: 30 毫欧 @ 7.3A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 20nC @ 4.5V
输入电容 (Ciss) @ Vds: 1645pF @ 10V
功率 - 最大: 900mW
安装类型: 表面贴装
封装/外壳: 6-WDFN 裸露焊盘
供应商设备封装: MicroFET 2x2
包装: 标准包装
产品目录页面: 1609 (CN2011-ZH PDF)
其它名称: FDMA520PZDKR
Typical Characteristics T J = 25°C unless otherwise noted
24
3.0
V GS = -4V
18
V GS = -4.5V PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
V GS = -3.5V
2.5
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
12
V GS = -3V
V GS = -2.5V
2.0
V GS = -2.5V
V GS = -3V
1.5
V GS = -3.5V
6
1.0
V GS = -4V
V GS = -4.5V
0
0.5
0
1
2
3
4
0
6
12 18
24
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.6
I D = -7.3A
-ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
60
PULSE DURATION = 80 s
1.4
1.2
V GS = -4.5V
50
40
DUTY CYCLE = 0.5%MAX
T J = 125 o C
1.0
0.8
30
20
I D = -3.6A
T J = 25 o C
0.6
10
-50
-25
0
25
50
75
100
125
150
2
3 4 5 6 7
8
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On- Resistance
vs Junction Temperature
24
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
30
18
12
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
V DD = -5V
10
1
0.1
V GS = 0V
T J = 125 o C
T J = 25 o C
6
T J = 125 o C
T J = 25 o C
0.01
0.001
T J = -55 o C
T J
=-55 o C
0
0
1
2
3
4
0.0001
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
1.6
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMA520PZ Rev.B2
3
www.fairchildsemi.com
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