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| 型号： | FDMC2674 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 220V 1A 3.3SQ MLP |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 17/March/2008 |
| 产品目录绘图： | 8-MLP, Power33, 56 Dual |
| 标准包装： | 1 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 220V |
| 电流 - 连续漏极(Id) @ 25° C： | 1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 366 毫欧 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1180pF @ 100V |
| 功率 - 最大： | 2.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerVDFN |
| 供应商设备封装： | 8-Power33（3x3） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMC2674DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DS S
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0V
I D = 250 μ A, referenced to 25°C
V DS = 176V, V GS = 0V
V GS = ±20V, V DS = 0V
220
248
1
±100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
Δ V GS(th)
Δ T J
r DS(on)
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25°C
V GS = 10V, I D = 1.0A
V GS = 10V, I D = 1.0A , T J = 150°C
2
3.4
-10.2
305
678
4
366
814
V
mV/°C
m Ω
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 100V, V GS = 0V,
f = 1MHz
880
70
11
1180
95
20
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g(TOT)
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = 100V, I D = 1.0A
V GS = 10V, R GEN = 2.4 Ω
V GS = 0V to 10V V DD = 15V
I D = 1.0A
9
13
15
21
12.7
3.8
2.9
18
23
27
34
18
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = 2.2A
(Note 2)
0.8
1.5
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 1.0A, di/dt = 100A/ μ s
60
109
ns
nC
Notes:
1: R θ JA is determined with the device mounted on a 1 in 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ JA is determined by the
user's board design.
(a)R θ JA = 60°C/W when mounted on a 1 in 2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.
(b)R θ JA = 135°C/W when mounted on a minimum pad of 2 oz copper.
a. 60°C/W when mounted on a
1 in 2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3: Starting T J = 25 ° C; N-ch: L = 1mH, I AS = 4.7A, V DD = 25V, V GS = 10V.
b. 135°C/W when mounted on a
minimum pad of 2 oz copper
FDMC2674 Rev.F3
2
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FDMC2674 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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