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| 型号： | FDMC8554 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 16.5A POWER33 |
| 产品变化通告： | Mold Compound Change 17/March/2008 |
| 产品目录绘图： | 8-MLP, Power33, 56 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 16.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 毫欧 @ 16.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 62nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3380pF @ 10V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerVDFN |
| 供应商设备封装： | 8-Power33（3x3） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMC8554DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DS S
Δ T J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A, V GS = 0V
I D = 250 μ A, referenced to 25°C
20
15.7
V
mV/°C
I DSS
Zero Gate Voltage Drain Current
V DS = 16V,
V GS = 0V
T J = 125°C
1
100
μ A
I GSS
Gate to Source Leakage Current
V GS = ±20V, V DS = 0V
±100
nA
On Characteristics
V GS(th)
Δ V GS(th )
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25°C
1.0
1.8
-6.1
3.0
V
mV/°C
V GS = 10V, I D = 16.5A
3.6
5.0
r DS(on)
Drain to Source On Resistance
V GS = 4.5V, I D = 14A
4.6
6.4
m Ω
V GS = 10V, I D = 16.5A, T J = 125°C
5.4
7.1
g FS
Forward Transconductance
V DS = 5V, I D = 16.5A
62
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 10V, V GS = 0V,
f = 1MHz
f = 1MHz
2540
795
510
1.2
3380
1060
765
pF
pF
pF
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g(TOT)
Q g(TOT)
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 4.5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = 10V, I D = 16.5A
V GS = 10V, R GEN = 6 Ω
V DD = 10V, I D = 16.5A
13
10
32
7
44
24
8.5
10
24
20
51
14
62
34
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = 16.5A
(Note 2)
0.8
1.3
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 16.5A, di/dt = 100A/ μ s
31
22
47
33
ns
nC
Notes:
1: R θ JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a. 60°C/W when mounted on
a 1 in 2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
b. 135°C/W when mounted on a
minimum pad of 2 oz copper
FDMC8554 Rev.C1
2
www.fairchildsemi.com
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