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| 型号： | FDMS7580 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 15A POWER56 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 15A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.5 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1190pF @ 13V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 其它名称： | FDMS7580DKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 20 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
25
18
1
100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
? V GS(th)
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
1.0
1.6
-6
3.0
V
mV/°C
V GS = 10 V, I D = 15 A
5.9
7.5
r DS(on)
Static Drain to Source On Resistance
V GS = 4.5 V, I D = 12 A
8.3
11.1
m ?
V GS = 10 V, I D = 15 A, T J = 125 °C
8.3
10.6
g FS
Forward Transconductance
V DD = 5 V, I D = 15 A
63
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 13 V, V GS = 0 V,
f = 1 MHz
894
277
53
1.1
1190
370
80
2.2
pF
pF
pF
?
Switching Characteristics
t d(on)
Turn-On Delay Time
7.3
15
ns
t r
t d(off)
t f
Q g(TOT)
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
V DD = 13 V, I D = 15 A,
V GS = 10 V, R GEN = 6 ?
V GS = 0 V to 10 V
V GS = 0 V to 4.5 V V DD = 13 V
I D = 15 A
2.4
17
2.1
14
6.5
2.9
1.6
10
31
10
20
10
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 2 A
V GS = 0 V, I S = 15 A
I F = 15 A, di/dt = 100 A/ μ s
I F = 15 A, di/dt = 300 A/ μ s
(Note 2)
(Note 2)
0.73
0.85
19
5.1
15
8.9
1.1
1.2
34
10
27
18
V
ns
nC
ns
NOTES:
1. R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a. 50 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 30 0 μ s, Duty cycle < 2.0 %.
3. E AS of 32 mJ is based on starting T J = 25 ° C, L = 1 mH, I AS = 8 A, V DD = 23 V, V GS = 10 V. 100% test at L = 0.3 mH, I AS = 12 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7580 Rev.C
2
www.fairchildsemi.com
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