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参数资料
| 型号： | FDP020N06B |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 120A TO-220-3 |
| 标准包装： | 50 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 120A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 毫欧 @ 100A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 268nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 20930pF @ 30V |
| 功率 - 最大： | 333W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220-3 |
| 包装： | 管件 |
Package Marking and Ordering Information
Part Number
FDP020N06B_F102
Top Mark
FDP020N06B
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
I D = 250 μ A, Referenced to 25 C
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, V GS = 0 V
V DS = 48 V, V GS = 0 V
V DS = 48 V, T C = 150 o C
V GS = ±20 V, V DS = 0 V
o
60
-
-
-
-
-
0.03
-
-
-
-
-
1
500
±100
V
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 100 A
V DS = 10 V, I D = 100 A
2.5
-
-
3.3
1.65
263
4.5
2.0
-
V
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss(er)
Q g(tot)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
V DS = 30 V, V GS = 0 V,
f = 1 MHz
V DS = 30 V, V GS = 0 V
-
-
-
-
-
16100
3840
127
5897
206
20930
4992
-
-
268
pF
pF
pF
pF
nC
Q gs
Q gs2
Q gd
ESR
Gate to Source Gate Charge
Gate to Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance(G-S)
V DS = 30 V, I D = 100 A,
V GS = 10 V
f = 1 MHz
(Note 4)
-
-
-
-
87
36
34
0.9
-
-
-
-
nC
nC
nC
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 30 V, I D = 100 A,
V GS = 10 V, R G = 4.7 Ω
(Note 4)
-
-
-
-
74
62
112
42
158
134
234
94
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
313*
1252
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 100 A
V GS = 0 V, V DD = 30 V, I SD = 100 A,
dI F /dt = 100 A/ μ s
-
-
-
-
106
194
1.25
-
-
V
ns
nC
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature
2: Starting T J = 25°C, L = 3 mH, I AS = 35.2 A
3: I SD ≤ 100 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25°C
4: Essentially independent of operating temperature typical characteristics.
?2011 Fairchild Semiconductor Corporation
FDP020N06B Rev. C8
2
www.fairchildsemi.com
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