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参数资料
| 型号： | FDP13AN06A |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel PowerTrench MOSFET 60V, 62A, 13.5mз |
| 中文描述： | N沟道的PowerTrench MOSFET的60V的62A条，13.5mз |
| 文件页数： | 2/11页 |
| 文件大小： | 300K |
| 代理商： | FDP13AN06A |
2003 Fairchild Semiconductor Corporation
FDB13AN06A0 / FDP13AN06A0 Rev. A1
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain
“
Miller
”
Charge
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25°C, L = 45
μ
H, I
AS
= 50A.
2:
Pulse width = 100s.
Device Marking
FDB13AN06A0
FDP13AN06A0
Device
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
FDB13AN06A0
FDP13AN06A0
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 50V
V
GS
= 0V
V
GS
=
±
20V
60
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 62A, V
GS
= 10V
I
D
= 31A, V
GS
= 6V
I
D
= 62A, V
GS
= 10V,
T
J
= 175
o
C
2
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.0115 0.0135
0.022
0.034
-
0.026
0.030
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
1350
260
90
22
2.6
8.5
5.9
6.4
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 30V
I
D
= 62A
I
g
= 1.0mA
29
3.4
-
-
-
-
-
-
-
V
DD
= 30V, I
D
= 62A
V
GS
= 10V, R
GS
= 12
-
-
-
-
-
-
-
9
158
-
-
-
-
74
ns
ns
ns
ns
ns
ns
96
24
26
-
V
SD
Source to Drain Diode Voltage
I
SD
= 62A
I
SD
= 31A
I
SD
= 62A, dI
SD
/dt = 100A/
μ
s
I
SD
= 62A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
25
17
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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相关代理商/技术参数 |
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| FDP13AN06A0 | 功能描述:MOSFET 60V 62a 0.0135 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP13AN06A0_NL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| FDP13N40 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP13N50F | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 12A, 0.54ヘ |
| FDP13N50F_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 12A, 0.54?? |
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