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| 型号： | FDP5500 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 80A TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 269nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 3565pF @ 25V |
| 功率 - 最大： | 375W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220-3 |
| 包装： | 管件 |
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V DSS
V DGR
V GS
I D
E AS
P D
Drain to Source Voltage
Drain to Gate Voltage (R GS = 20k ?)
Gate to Source Voltage
Drain Current Continuous (T C < 135 o C, V GS = 10V)
Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25 o C
(Note 1)
(Note 1)
(Note 2)
55
55
±20
80
See Figure 4
860
375
2.5
V
V
V
A
mJ
W
W/ o C
T J , T STG Operating and Storage Temperature
T L Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec)
Max. Package Temp. for Soldering (Package Body for 10sec)
T pkg
-55 to + 175
300
260
o
C
Thermal Characteristics
R θ JC
Thermal Resistance Junction to Case
0.4
o C/W
R θ JA
Thermal Resistance Junction to Ambient TO-220AB, 1in 2 copper pad area
62
o
C/W
Package Marking and Ordering Information
Device Marking
FDP5500
Device
FDP5500_F085
Package
TO-220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Electrical Characteristics T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
I DSS
I GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0V
V DS = 50V, V GS = 0V
V DS = 45V T C = 150 o C
V GS = ±20V
55
-
-
-
-
-
-
-
-
1
250
±100
V
μ A
nA
On Characteristics
V GS(th)
r DS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V GS = V DS , I D = 250 μ A
I D = 80A, V GS = 10V
2
-
2.8
5.1
4
7
V
m ?
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25V, V GS = 0V,
f = 1MHz
-
-
-
3565
1310
395
-
-
-
pF
pF
pF
Q g(TOT)
Q g(10)
Q g(TH)
Q gs
Q gd
Total Gate Charge at 20V
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
V GS = 0 to 20V
V GS = 0 to 10V
V GS = 0 to 2V
V DD = 30V
I D = 80A
R L = 0.4 ?
I g = 1.0mA
-
-
-
-
-
207
114
6.6
17.2
52
269
148
8.6
-
-
nC
nC
nC
nC
nC
FDP5500_F085 Rev. A
2
www.fairchildsemi.com
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