参数资料
型号: FDPF320N06L
厂商: Fairchild Semiconductor
文件页数: 1/8页
文件大小: 0K
描述: MOSFET N-CH 60V 21A TO-220F
标准包装: 50
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 21A
开态Rds(最大)@ Id, Vgs @ 25° C: 25 毫欧 @ 21A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 30.2nC @ 10V
输入电容 (Ciss) @ Vds: 1470pF @ 25V
功率 - 最大: 26W
安装类型: 通孔
封装/外壳: TO-220-3 整包
供应商设备封装: TO-220F
包装: 管件
December 2013
FDPF320N06L
N-Channel Logic Level PowerTrench ? MOSFET
60 V, 21 A, 25 m Ω
Features
? R DS(on) = 20 m Ω (Typ.) @ V GS = 10 V, I D = 21 A
? R DS(on) = 23 m Ω (Typ.) @ V GS = 5 V, I D = 17 A
? Low Gate Charge (Typ. 23.2 nC)
? Low C rss (Typ. 64 pF)
? Fast Switching Speed
? 100% Avalanche Tested
? Improved dv/dt Capability
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor ’s advanced PowerTrench ? process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Applications
? Consumer Appliances
? LCD/LED/PDP TV
? RoHS Compliant
D
D
G
S
TO-220F
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDPF320N06L
60
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±20
21
15
V
A
I DM
Drain Current
- Pulsed
(Note 1)
84
A
E AS
dv/dt
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 3)
66
6.0
mJ
V/ns
P D
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
26
0.17
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +175
300
o C
o C
Thermal Characteristics
Symbol
Parameter
FDPF320N06L
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
5.8
62.5
o
C/W
?2011 Fairchild Semiconductor Corporation
FDPF320N06L Rev. C3
1
www.fairchildsemi.com
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