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参数资料
| 型号： | FDPF320N06L |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 21A TO-220F |
| 标准包装： | 50 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 21A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 21A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1470pF @ 25V |
| 功率 - 最大： | 26W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
Package Marking and Ordering Information
Part Number
FDPF320N06L
Top Mark
FDPF320N06L
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
I D = 250 μ A, Referenced to 25 C
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, V GS = 0 V
V DS = 48 V, V GS = 0 V
V DS = 48 V, T C = 150 o C
V GS = ±20 V, V DS = 0 V
o
60
-
-
-
-
-
0.04
-
-
-
-
-
1
500
±100
V
V/ o C
μ A
μ A
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 21 A
V GS = 5 V, I D = 17 A
V DS = 10 V, I D = 21 A
1.0
-
-
-
-
20
23
34
2.5
25
38
-
V
m Ω
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Q g(tot)
Q g(tot)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
V DS = 25 V, V GS = 0 V
f = 1 MHz
V GS = 10 V
V GS = 5 V
-
-
-
-
-
1105
115
64
23.2
12.7
1470
150
-
30.2
16.5
pF
pF
pF
nC
nC
Q gs
Q gd
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 48 V,
I D = 21 A
(Note 4)
-
-
3.4
6.3
-
-
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
ESR
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Equivalent Series Resistance (G-S)
V DD = 30 V, I D = 21 A,
V GS = 5 V, R G = 4.7 Ω
f = 1MHz
(Note 4)
-
-
-
-
-
16
34
27
8
2
42
78
64
26
-
ns
ns
ns
ns
Ω
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
21
84
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 21 A
V GS = 0 V, I SD = 21 A,V DD = 48 V,
dI F /dt = 100 A/ μ s
-
-
-
-
27
23
1.3
-
-
V
ns
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1 mH, I AS = 11.5 A, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 21 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2011 Fairchild Semiconductor Corporation
FDPF320N06L Rev. C3
2
www.fairchildsemi.com
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