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| 型号： | FDS2670 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 3A SO-8 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 130 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 43nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1228pF @ 100V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | SO-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDS2670DKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 1)
W DSS
Single Pulse Drain-Source
V DD = 100 V,
I D = 3.0 A
375
mJ
Avalanche Energy
I AR
Maximum Drain-Source Avalanche
3.0
A
Current
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
200
214
V
mV/ ° C
I DSS
I GSSF
I GSSR
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V DS = 160 V,
V GS = 20 V,
V GS = –20 V
V GS = 0 V
V DS = 0 V
V DS = 0 V
1
100
–100
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = 250 μ A
2
4
4.5
V
? V GS(th)
? T J
Gate Threshold Voltage
Temperature Coefficient
I D = 250 μ A, Referenced to 25 ° C
–10
mV/ ° C
R DS(on)
I D(on)
Static Drain–Source
On–Resistance
On–State Drain Current
V GS = 10 V, I D = 3.0 A
V GS =10 V, I D =3.0 A, T J =125 ° C
V GS = 10 V, V DS = 10 V
20
100
205
130
275
m ?
A
g FS
Forward Transconductance
V DS = 10 V,
I D = 3.0 A
15
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 100 V,
f = 1.0 MHz
V GS = 0 V,
1228
112
17
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 100 V,
V GS = 10 V,
V DS = 100 V,
V GS = 10 V
I D = 1 A,
R GEN = 6 ?
I D = 3 A,
13
8
30
25
27
7
23
16
48
40
43
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
10
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
2.1
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V, I S = 2.1 A
(Note 2)
0.7
1.2
V
FDS2670 Rev C1(W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDS2672_F085 | MOSFET N-CH 200V 3.9A 8-SOIC |
| FDS2672 | MOSFET N-CH 200V 3.9A 8-SOIC |
| FDS2734 | MOSFET N-CH 250V 3A 8-SOIC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS2670 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS2670_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:200V N-Channel PowerTrench MOSFET |
| FDS2672 | 功能描述:MOSFET 200V 3.9A 70OHM NCH ULTRAFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS2672 | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET |
| FDS2672_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench?? MOSFET |
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