参数资料
型号: FDS2734
厂商: Fairchild Semiconductor
文件页数: 1/6页
文件大小: 0K
描述: MOSFET N-CH 250V 3A 8-SOIC
产品变化通告: Mold Compound Change 12/Dec/2007
标准包装: 1
系列: UltraFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 250V
电流 - 连续漏极(Id) @ 25° C: 3A
开态Rds(最大)@ Id, Vgs @ 25° C: 117 毫欧 @ 3A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 45nC @ 10V
输入电容 (Ciss) @ Vds: 2610pF @ 100V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
产品目录页面: 1603 (CN2011-ZH PDF)
其它名称: FDS2734DKR
August 2006
FDS2734
N-Channel UItraFET Trench ? MOSFET
250V, 3.0A, 117m ?
tm
Features
Max r DS(on) =117m ? at V GS =10V, I D = 3.0A
Max r DS(on) =126m ? at V GS = 6V, I D = 2.8A
Fast switching speed
General Descriptions
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced UItraFET Trench ?
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior switching
performance.
High performance trench
low r DS(on)
technology for
extremely
Application
DC-DC conversion
High power and current handling capability
RoHS compliant
D
D
D
D
5
4
6
3
SO- 8
Pin 1
S
S
S
G
7
8
2
1
MOSFET Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
250
± 20
Units
V
V
I D
E AS
P D
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power dissipation
Power dissipation
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
3.0
50
12.5
2.5
1.0
A
mJ
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to 150
o
C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction- to -Ambient
(Note 1a)
50
R θ JA
R θ JC
Thermal Resistance, Junction- to- Ambient
Thermal Resistance, Junction -to- Case
(Note 1b)
(Note 1)
125
25
o C/W
Package Marking and Ordering Information
Device Marking
FDS2734
Device
FDS2734
Package
SO-8
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
?2006 Fairchild Semiconductor Corporation
FDS2734 Rev. B
1
www.fairchildsemi.com
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