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参数资料
| 型号： | FDS2734 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 250V 3A 8-SOIC |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 250V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 117 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 45nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2610pF @ 100V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDS2734DKR |
Typical Characteristics T J = 25°C unless otherwise noted
50
40
V GS - Descending Order
V GS = 10V
8V
6V
2.5
2.0
V GS = 4.5V
V GS = 5V
V GS = 6V
30
5V
20
10
1.5
1.0
V GS = 10V
V GS = 8V
0
0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
2 4 6 8
V DS , DRAIN TO SOURCE VOLTAGE (V)
10
0.5
0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
10 20 30 40
I D , DRAIN CURRENT(A)
50
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
2.8
2.4
I D = 3.0A
V GS = 10V
0.4
I D =3A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
0.3
2.0
T J = 150 o C
1.6
0.2
1.2
0.1
0.8
T J = 25 o C
0.4
-50
-25 0 25 50 75 100 125
150
0.0
3
4 5 6 7 8 9
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On Resistance vs Junction
Temperature
20
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to Source
Voltage
100
V GS = 0V
15
10
10
T J = 150 o C
5
T J = 150 o C
T J = 25 o C
1
T J = 25 o C
T J = -55 o C
T J = -55 o C
0
2
3 4 5
6
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
1.4
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
FDS2734 Rev. B
3
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode Forward Voltage
vs Source Current
www.fairchildsemi.com
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