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| 型号： | FDS2672 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 3.9A 8-SOIC |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 3.9A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 46nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2535pF @ 100V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDS2672DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0V
I D = 250 μ A, referenced to 25°C
V DS = 160V, V GS =0V
V DS = 160V, V GS =0V T J = 55°C
V GS = ±20V
200
206
1
10
±100
V
mV/° C
μ A
μ A
nA
On Characteristics (Note 2)
V GS(th)
? V GS(th )
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25°C
2
2.9
-11
4
V
mV/°C
V GS = 10V, I D = 3.9A
59
70
r DS(on)
Drain to Source On Resistance
V GS = 6V, I D = 3.5A
63
80
m ?
V GS = 10V, I D = 3.9A, T J = 125°C
124
148
g FS
Forward Transcondductance
V DS = 10V,I D = 3.9A
15
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 100V, V GS = 0V,
f = 1MHz
f = 1MHz
1905
100
30
0.7
2535
135
45
pF
pF
pF
?
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g(TOT)
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
V DD = 100V, I D = 3.9A
V GS = 10V, R GEN = 6 ?
V DD =100V I D = 3.9A
22
10
35
10
33
11
7
35
20
56
20
46
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I S = 3.9A
I F = 3.9A, di/dt = 100A/ μ s
I F = 3.9A, di/dt = 100A/ μ s
0.75
67
179
1.2
101
269
V
ns
nC
Notes:
1: R θ JA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user’s board design.
a)
50°C/W (10 sec)
b) 125°C/W when mounted on a
62.5°C/W steady state
when mounted on a 1in 2
pad of 2 oz copper
Scale 1:1 on letter size paper
2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
3: Starting T J = 25 ° C, L = 3mH, I AS = 5A, V DD = 100V, V GS = 10V
minimum pad .
FDS2672 Rev. B
2
www.fairchildsemi.com
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