- 您现在的位置：买卖IC网 > Datasheet目录425 > FDS4141 (Fairchild Semiconductor)MOSFET P-CH 40V 10.8A 8-SOIC Datasheet资料下载
参数资料
| 型号： | FDS4141 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 40V 10.8A 8-SOIC |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 10.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 49nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2670pF @ 20V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDS4141DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DS S
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = -250 μ A, V GS = 0V
I D = -250 μ A, referenced to 25°C
V DS = -32V,
V GS = ±20V, V DS = 0V
-40
-33
-1
±100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
? V GS(th )
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = -250 μ A
I D = -250 μ A, referenced to 25°C
-1.0
-1.6
5.3
-3.0
V
mV/°C
V GS = -10V, I D = -10.5A
11.0
13.0
r DS(on)
Static Drain to Source On Resistance
V GS = -4.5V, I D = -8.4A
15.2
19.0
m ?
V GS = -10V, I D = -10.5A, T J = 125°C
16.8
19.9
g FS
Forward Transconductance
V DD = -5V, I D = -10.5A
37
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = -20V, V GS = 0V,
f = 1MHz
f = 1MHz
2005
355
190
5
2670
475
285
pF
pF
pF
?
Switching Characteristics
t d(on)
Turn-On Delay Time
10
20
ns
t r
t d(off)
t f
Q g
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
V DD = -20V, I D = -10.5A,
V GS = -10V, R GEN = 6 ?
V GS = 0V to -10V
5
42
12
35
10
68
22
49
ns
ns
ns
nC
Q g
Q gs
Total Gate Charge
Gate to Source Charge
V GS = 0V to -5V
V DD = -20V,
I D = -10.5A
19
6
27
nC
nC
Q gd
Gate to Drain “Miller” Charge
7
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = -10.5A
V GS = 0V, I S = -2.1A
(Note 2)
(Note 2)
-0.8
-0.7
-1.3
-1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = -10.5A, di/dt = 100A/ μ s
26
14
42
26
ns
nC
NOTES:
1. R θ JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a) 50°C/W when mounted on a
1in 2 pad of 2 oz copper.
2. Pulse Test: Pulse Width < 30 0 μ s, Duty cycle < 2.0%.
3. UIL condition: Starting T J = 25°C, L = 3mH, I AS = -14A, V DD = -40V, V GS = -10V.
b) 125°C/W when mounted on a
minimum pad.
?2007 Fairchild Semiconductor Corporation
FDS4141 Rev.C
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDS4410A | MOSFET N-CH 30V 10A 8SOIC |
| FDS4435BZ_F085 | MOSFET P-CH 30V 8-SOIC |
| FDS4435 | MOSFET P-CH 30V 8.8A 8-SOIC |
| FDS4465_F085 | MOSFET P-CH 20V 8-SOIC |
| FDS4465 | MOSFET P-CH 20V 13.5A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS4141_F085 | 功能描述:MOSFET -40V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4410 | 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4410_NL | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET N-CH 30V 10A 8-Pin SOIC N |
| FDS4410A | 功能描述:MOSFET LOGIC LEVEL PO SINGLE NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4435 | 功能描述:MOSFET SO-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。