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| 型号： | FDS8690 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 14A 8-SOIC |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 14A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.6 毫欧 @ 14A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1680pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDS8690DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? B VDSS
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0V
I D = 250 μ A, referenced to
25°C
V DS = 24V, V GS = 0V
V GS = ± 20V, V DS = 0V
30
34.3
1
± 100
V
mV/°C
μ A
nA
On Characteristics (Note 2)
V GS(th)
? V GS(th )
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to
25°C
1
1.6
- 4.5
3
V
mV/°C
V GS = 10V, I D = 14A
6.3
7.6
r DS(ON)
Drain to Source On Resistance
V GS = 4.5V, I D = 11.5A
V GS = 10V, I D = 14A,
T J = 125°C
8.6
9.0
1 1.4
10.9
m ?
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15V, V GS = 0V,
f = 1MHz
f = 1MHz
1260
535
80
1.1
1680
715
120
pF
pF
pF
?
Switching Characteristics (Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain Charge
V DS = 15V, I D = 1A,
V GS = 10V, R GS = 6 ?
V DS = 15V, V GS = 10V
I D = 14A
V DS = 15V, V GS = 5V
I D = 14A
8.0
1.8
26
19
18.8
10
3.5
2.9
16
10
42
35
27
14
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage V GS = 0V, I S = 2.1A
0.7
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 14A, di/dt = 100A/ μ s
I F = 14A, di/dt = 100A/ μ s
45
33
ns
nC
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user’s board design.
a) 50 ° C/W when
mounted on a 1 in 2
pad of 2 oz copper
b)105 ° C/W when
mounted on a .04 in 2
pad of 2 oz copper
c) 125 ° C/W when
mounted on a
minimun pad
2. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
3. Starting T J = 25 o C, L = 3mH, I AS = 11.8A , V DD = 24V, V GS = 10V.
FDS8690 Rev. B
2
www.fairchildsemi.com
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