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| 型号： | FDS8935 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 80V 2.1A 8SOIC |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 80V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 183 毫欧 @ 2.1A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 19nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 879pF @ 40V |
| 功率 - 最大： | 1.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 其它名称： | FDS8935DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DSS
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = -250 μ A, V GS = 0 V
I D = -250 μ A, referenced to 25 °C
V DS = -64 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
-80
-61
-1
±100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
Δ V GS(th)
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = -250 μ A
I D = -250 μ A, referenced to 25 °C
-1
-1.8
5
-3
V
mV/°C
V GS = -10 V, I D = -2.1 A
148
183
r DS(on)
Static Drain to Source On Resistance
V GS = -4.5 V, I D = -1.9 A
176
247
m Ω
V GS = -10 V, I D = -2.1 A,T J = 125 °C
249
308
g FS
Forward Transconductance
V DS = -10 V, I D = -2.1 A
6.4
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = -40 V, V GS = 0 V,
f = 1MHz
661
47
24
6
879
63
36
pF
pF
pF
Ω
Switching Characteristics
t d(on)
Turn-On Delay Time
5
10
ns
t r
t d(off)
t f
Q g(TOT)
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
V DD = -40 V, I D = -2.1 A,
V GS = -10 V, R GEN = 6 Ω
V GS = 0 V to -10 V
3
22
3
13
10
36
10
19
ns
ns
ns
nC
Q g(TOT)
Q gs
Total Gate Charge
Gate to Source Charge
V GS = 0 V to -5 V
V DD = -40 V,
I D = -2.1 A
7
1.6
10
nC
nC
Q gd
Gate to Drain “Miller” Charge
2.6
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = -2.1 A
V GS = 0 V, I S = -1.3 A
I F = -2.1 A, di/dt = 300 A/ μ s
(Note 2)
(Note 2)
-1.8
-0.8
19
34
-1.3
-1.2
30
54
V
ns
nC
NOTES:
1. R θ JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a)78 °C/W when
mounted on a 1 in 2
pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3. Starting T J = 25 °C, L = 3.0 mH, I AS = -5.0 A, V DD = -80V, V GS = -10V.
b)135 °C/W when
mounted on a
minimun pad
?2010 Fairchild Semiconductor Corporation
FDS8935 Rev.C
2
www.fairchildsemi.com
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