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参数资料
| 型号： | FDS8958B |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 30V TRENCH 8-SOIC |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.4A，4.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 26 毫欧 @ 6.4A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 540pF @ 15V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDS8958BDKR |
FDS8958B
Dual N & P-Channel PowerTrench ? MOSFET
Q1-N-Channel: 30 V, 6.4 A, 26 m ? Q2 - P-Channel: -30 V, -4.5 A, 51 m ?
Novem ber 2013
Features
Q1: N-Channel
Max r DS(on) = 26 m ? at V GS = 10 V, I D = 6.4 A
Max r DS(on) = 39 m ? at V GS = 4.5 V, I D = 5.2 A
Q2: P-Channel
Max r DS(on) = 51 m ? at V GS = -10 V, I D = -4.5 A
Max r DS(on) = 80 m ? at V GS = -4.5 V, I D = -3.3 A
HBM ESD protection level > 3.5 kV (Note 3)
RoHS Compliant
General Description
These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild Semiconductor's
advanced PowerTrench ? process th at has been especially
tailored to minimize on-state resistan ce and yet maintain
superior switching performance.
These devices are well suite d for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Application
DC-DC Conversion
BLU and motor drive inverter
D2
D1
D1
D2
D2
D2
5
6
Q2
4
3
G2
S2
Pin 1
S1
G1
S2
G2
D1
D1
7
8
Q1
2
1
G1
S1
SO-8
MOSFET Maximum Ratings T C = 25 °C unless otherwise noted
Symbol
Parameter
Q1
Q2
Units
V DS
V GS
I D
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Pulsed
T A = 25 °C
30
±20
6.4
30
-30
±25
-4.5
-30
V
V
A
Power Dissipation for Dual Operation
2.0
P D
E AS
T J , T STG
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
T A = 25 °C
T A = 25 °C
(Note 1a)
(Note 1b)
(Note 4)
1.6
0.9
18
-55 to +150
5
W
mJ
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 1a)
40
78
°C/W
Package Marking and Ordering Information
Device Marking
FDS8958B
Device
FDS8958B
Package
SO-8
Reel Size
13 ”
Tape Width
12 mm
Quantity
2500 units
?2008 Fairchild Semiconductor Corporation
FDS8958B Rev.C
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDS8958 | MOSFET N/P-CH DUAL 30V 8SOIC |
| FDS8960C | MOSFET N/P-CH DUAL 35V 8-SOIC |
| FDS8962C | MOSFET N/P-CH DUAL 30V 8SOIC |
| FDS8978 | MOSFET N-CH DUAL 30V 8-SOIC |
| FDS8984_F085 | MOSFET N-CH 30V 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8960C | 功能描述:MOSFET 35V Dual N & P-Chl PwrTrnch #174 MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8960C_0511 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrench㈢ MOSFET |
| FDS8962C | 功能描述:MOSFET SO8 DUAL NCH & PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8978 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8978_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
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