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| 型号： | FDS8978 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 30V 8-SOIC |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 18 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 907pF @ 15V |
| 功率 - 最大： | 1.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | FDS8978DKR |
January 2011
FDS8978
N-Channel PowerTrench ? MOSFET
30V, 7.5A, 18m ?
Features
r DS(on) = 18m ? , V GS = 10V, I D = 7.5A
r DS(on) = 21m ? , V GS = 4.5V, I D = 6.9A
High performance trench technology for extremely low
r DS(on)
Low gate charge
High power and current handling capability
100% Rg Tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r DS(on) and fast switching speed.
Applications
DC/DC converters
D1
D1
D2
D2
D2
D2
5
6
Q2
4
3
G2
S2
SO-8
Pin 1
S1
G1
S2
G2
D1
D1
7
8
Q1
2
1
G1
S1
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
30
±20
Units
V
V
Drain Current
I D
E AS
P D
T J , T STG
Continuous (T A = 25 o C, V GS = 10V, R θ JA = 50 o C/W)
Continuous (T A = 25 o C, V GS = 4.5V, R θ JA = 50 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 o C
Operating and Storage Temperature
7.5
6.9
49
57
1.6
13
-55 to 150
A
A
A
mJ
W
mW/ o C
o C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient (Note 2a)
40
78
o
o
C/W
C/W
R θ JA
Thermal Resistance, Junction to Ambient (Note 2c)
135
o C/W
Package Marking and Ordering Information
Device Marking
FDS8978
Device
FDS8978
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
?2011 Fairchild Semiconductor Corporation
FDS8978 Rev. B1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8978_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDS8978_11 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET |
| FDS8978_F123 | 功能描述:MOSFET 30V N-CHAN 7.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8984 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8984_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
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